Deformation of thin self-standing mask at inhomogeneous irradiation.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F17%3A00484974" target="_blank" >RIV/61389021:_____/17:00484974 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/17:00484974

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Deformation of thin self-standing mask at inhomogeneous irradiation.

Popis výsledku v původním jazyce

Flatness of the mask is one of key features influencing the quality of image. Among factors that can affect mask flatness belongs inhomogeneous illumination. This does not apply to lithography, but to experiments that use only discrete parts of mask e.g. for nanostructuring or other type of material research. It is shown that even single EUV laser shot (laser wavelength ~46.9 nm, pulse duration ~1.5 ns, focused pulse energy ~20 .mu.J, peak fluency 48 J/cm2) not only deforms the mask, but also changes mask-substrate distance. In our case two kinds of grids (one circular with rectangular windows 7.5x7.5 μm and bars 5 micro m (period 12.5x12.5 micro m), other rectangular with rectangular windows 3.2x1.2 μm and bars 0.8 micro m (period 4x2 micro m)) were attached to PMMA substrate and exposed to one or five superimposed focused laser shots. The mask (grid) deformation was inferred from the changes of diffraction pattern engraved into PMMA.

Název v anglickém jazyce

Deformation of thin self-standing mask at inhomogeneous irradiation.

Popis výsledku anglicky

Flatness of the mask is one of key features influencing the quality of image. Among factors that can affect mask flatness belongs inhomogeneous illumination. This does not apply to lithography, but to experiments that use only discrete parts of mask e.g. for nanostructuring or other type of material research. It is shown that even single EUV laser shot (laser wavelength ~46.9 nm, pulse duration ~1.5 ns, focused pulse energy ~20 .mu.J, peak fluency 48 J/cm2) not only deforms the mask, but also changes mask-substrate distance. In our case two kinds of grids (one circular with rectangular windows 7.5x7.5 μm and bars 5 micro m (period 12.5x12.5 micro m), other rectangular with rectangular windows 3.2x1.2 μm and bars 0.8 micro m (period 4x2 micro m)) were attached to PMMA substrate and exposed to one or five superimposed focused laser shots. The mask (grid) deformation was inferred from the changes of diffraction pattern engraved into PMMA.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/LG15013" target="_blank" >LG15013: Výzkum v rámci Mezinárodního centra hustého magnetizovaného plazmatu</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů