Crystallization of Ge8Sb2‐xBixTe11 thin films employing single femtosecond pulses

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F18%3A00494423" target="_blank" >RIV/61389021:_____/18:00494423 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization of Ge8Sb2‐xBixTe11 thin films employing single femtosecond pulses

Popis výsledku v původním jazyce

Recently, phase transition driven by an ultrafast (femtosecond or picosecond) pulsed laser has attracted increasing attention in attempts to increase the speed of the phase change processes [1−4]. Optical recording was the first demonstrated in 1992 with using ultrashort laser pulses. The advantage of this technology is that ultrafast lasers have potentials to resolve the heat diffusion limitation of the conventiona laser recording, achieving high area recording densities. The phase transition of Ge 8 Sb 2-x Bi x Te 11 (were x=0, 1, 2) thin films from the amorphous phase into the crystalline phase induced by single femtosecond pulses of 800 nm and 40 fs has been studied. It was established the pulse energy window for crystallization in the thin films with thickness 100 nm prepared by Flash Thermal Evaporation (FE). The crystallization ofmarks written in amorphous background by single fs pulses were characterized using anoptical microscope AXIO ZEISS. The topology of shot point was observed by WLI and AFM. The phase transition induced by the single and double femtosecond shots in the active Ge 8 Sb 2-x Bi x Te 11 layer was examined using X-ray diffraction (XRD), which confirmed the crystalline structure of thin films after single fs shot. The reflectivity difference between the amorphous and laser-induced crystalline phases upon fs irradiation was investigated by WASE. The optical contrast for fs-irradiated films was more as 25 %, which is relatively high value for optical recording.

Název v anglickém jazyce

Crystallization of Ge8Sb2‐xBixTe11 thin films employing single femtosecond pulses

Popis výsledku anglicky

Recently, phase transition driven by an ultrafast (femtosecond or picosecond) pulsed laser has attracted increasing attention in attempts to increase the speed of the phase change processes [1−4]. Optical recording was the first demonstrated in 1992 with using ultrashort laser pulses. The advantage of this technology is that ultrafast lasers have potentials to resolve the heat diffusion limitation of the conventiona laser recording, achieving high area recording densities. The phase transition of Ge 8 Sb 2-x Bi x Te 11 (were x=0, 1, 2) thin films from the amorphous phase into the crystalline phase induced by single femtosecond pulses of 800 nm and 40 fs has been studied. It was established the pulse energy window for crystallization in the thin films with thickness 100 nm prepared by Flash Thermal Evaporation (FE). The crystallization ofmarks written in amorphous background by single fs pulses were characterized using anoptical microscope AXIO ZEISS. The topology of shot point was observed by WLI and AFM. The phase transition induced by the single and double femtosecond shots in the active Ge 8 Sb 2-x Bi x Te 11 layer was examined using X-ray diffraction (XRD), which confirmed the crystalline structure of thin films after single fs shot. The reflectivity difference between the amorphous and laser-induced crystalline phases upon fs irradiation was investigated by WASE. The optical contrast for fs-irradiated films was more as 25 %, which is relatively high value for optical recording.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LO1206" target="_blank" >LO1206: Moderní optické systémy a technologie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů