Runaway electrons diagnostics using segmented semiconductor detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F19%3A00509566" target="_blank" >RIV/61389021:_____/19:00509566 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/18:00326144

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0920379618308196?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0920379618308196?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.fusengdes.2018.12.054" target="_blank" >10.1016/j.fusengdes.2018.12.054</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Runaway electrons diagnostics using segmented semiconductor detectors

Popis výsledku v původním jazyce

A novel application of strip and pixel silicon radiation detectors for study and characterization of run-away electron events in tokamaks is presented. Main goal was to monitor runaway electrons both directly and indirectly. The strip detector was placed inside the tokamak vacuum chamber in order to monitor the run-away electrons directly. Whereas the pixel detector was placed outside the tokamak chamber behind a pin hole for monitoring the run-away electrons indirectly via radiation produce by interaction of the electrons with the plasma facing material. Results obtained using the silicon detectors are compared with already existing diagnostic methods consisting of scintillation devices detecting X-rays and photo-neutrons, providing the same results in the observable comparisons. Tests with the pixel detector proved that the pinhole camera is able to extract spatial information of interaction point (a place where the runaway electrons hit on the facing material) and the strip detectors indicate presence of additional signal from throughout the discharge. The performed experiments are innovative, illustrating possible development of new and easy to use diagnostic method.

Název v anglickém jazyce

Runaway electrons diagnostics using segmented semiconductor detectors

Popis výsledku anglicky

A novel application of strip and pixel silicon radiation detectors for study and characterization of run-away electron events in tokamaks is presented. Main goal was to monitor runaway electrons both directly and indirectly. The strip detector was placed inside the tokamak vacuum chamber in order to monitor the run-away electrons directly. Whereas the pixel detector was placed outside the tokamak chamber behind a pin hole for monitoring the run-away electrons indirectly via radiation produce by interaction of the electrons with the plasma facing material. Results obtained using the silicon detectors are compared with already existing diagnostic methods consisting of scintillation devices detecting X-rays and photo-neutrons, providing the same results in the observable comparisons. Tests with the pixel detector proved that the pinhole camera is able to extract spatial information of interaction point (a place where the runaway electrons hit on the facing material) and the strip detectors indicate presence of additional signal from throughout the discharge. The performed experiments are innovative, illustrating possible development of new and easy to use diagnostic method.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/LM2015045" target="_blank" >LM2015045: COMPASS – Tokamak pro výzkum termonukleární fúze</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Fusion Engineering and Design

ISSN

0920-3796

e-ISSN

—

Svazek periodika

146

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

316-319

Kód UT WoS článku

000488307400071

EID výsledku v databázi Scopus

2-s2.0-85058817970