Dielectric Response and Low Dielectric Loss of Gadolinium-Doped CaCu3Ti4O12Ceramics Processed Through Conventional and Microwave Sintering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F23%3A00583134" target="_blank" >RIV/61389021:_____/23:00583134 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s11664-023-10341-w" target="_blank" >https://link.springer.com/article/10.1007/s11664-023-10341-w</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-023-10341-w" target="_blank" >10.1007/s11664-023-10341-w</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric Response and Low Dielectric Loss of Gadolinium-Doped CaCu3Ti4O12Ceramics Processed Through Conventional and Microwave Sintering

Popis výsledku v původním jazyce

Gadolinium-doped (CaCu3Ti4O12/CCTO)x ceramics were fabricated using conventional (CS) and microwave sintering (MWS) at x = 0.1, 0.2 and 0.3. The green compacts were sintered at 1100°C via muffle and microwave furnace at 5°C min−1/12 h and 50°C min−1/30 min, respectively. A single pure cubic phase of CCTO for MWS and minor secondary phases for CS were revealed by x-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images showed a reduction in grain size from ~ 20.04 ± 8.43 µm to ~ 17.52 ± 7.77 µm and ~ 1.99 ± 0.44 µm to ~ 1.32 ± 0.27 µm for both CS and MWS. The charge carrier hopping between Cu+ and Ti3+ was probed using x-ray photoelectron spectroscopy (XPS), which confirmed the conductivity of grains and internal barrier layer capacitance (IBLC) effect. Broadband dielectric spectrometer findings revealed a dielectric constant of ɛ > 104 at 10 Hz and ɛ > 103 at 100 kHz for CS at x = 0.2 and ɛ > 102 at 10 Hz (x ≤ 0.2) for MWS. A very minimal tanδ of 0.08 (x = 0.2) was recorded at 100 kHz.

Název v anglickém jazyce

Dielectric Response and Low Dielectric Loss of Gadolinium-Doped CaCu3Ti4O12Ceramics Processed Through Conventional and Microwave Sintering

Popis výsledku anglicky

Gadolinium-doped (CaCu3Ti4O12/CCTO)x ceramics were fabricated using conventional (CS) and microwave sintering (MWS) at x = 0.1, 0.2 and 0.3. The green compacts were sintered at 1100°C via muffle and microwave furnace at 5°C min−1/12 h and 50°C min−1/30 min, respectively. A single pure cubic phase of CCTO for MWS and minor secondary phases for CS were revealed by x-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images showed a reduction in grain size from ~ 20.04 ± 8.43 µm to ~ 17.52 ± 7.77 µm and ~ 1.99 ± 0.44 µm to ~ 1.32 ± 0.27 µm for both CS and MWS. The charge carrier hopping between Cu+ and Ti3+ was probed using x-ray photoelectron spectroscopy (XPS), which confirmed the conductivity of grains and internal barrier layer capacitance (IBLC) effect. Broadband dielectric spectrometer findings revealed a dielectric constant of ɛ > 104 at 10 Hz and ɛ > 103 at 100 kHz for CS at x = 0.2 and ɛ > 102 at 10 Hz (x ≤ 0.2) for MWS. A very minimal tanδ of 0.08 (x = 0.2) was recorded at 100 kHz.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20504 - Ceramics

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

1543-186X

Svazek periodika

52

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

11

Strana od-do

3848-3858

Kód UT WoS článku

000961215400002

EID výsledku v databázi Scopus

2-s2.0-85151360341