HIGH FREQUENCY MULTIPURPOSE SIC MOSFET DRIVER

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27240%2F21%3A10248237" target="_blank" >RIV/61989100:27240/21:10248237 - isvavai.cz</a>

Výsledek na webu

<a href="http://advances.utc.sk/index.php/AEEE/article/view/4159" target="_blank" >http://advances.utc.sk/index.php/AEEE/article/view/4159</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.15598/aeee.v19i3.4159" target="_blank" >10.15598/aeee.v19i3.4159</a>

Jazyk výsledku

angličtina

Název v původním jazyce

HIGH FREQUENCY MULTIPURPOSE SIC MOSFET DRIVER

Popis výsledku v původním jazyce

This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced driver enables to adjust the output voltage levels easily by choosing the integrated linear voltage stabilizers with suitable output parameters used for Printed Circuit Board (PCB) mounting. The voltage insulation of the proposed driver between the primary control side and the secondary output side is performed by MGJ6D12H24MC muRata Ps DC-DC converter with a declared dv/dt immunity 80 kV/1000 ms at 1.6 kV and by IX3180 IXYS High Speed gate driver optocouplers with a declared 10 kV/1000 ms minimum common mode rejection at 1.5 kV. The voltage insulation of these coupling elements is accompanied by safety gaps on the PCB. These insulation features enable the proposed driver to work on high frequencies as a high-side transistor of H-bridges as same as in other power converter topologies with a high frequency and high voltage stress of the insulation border. The proposed driver also provides the possibility of tripping the signal, when the short circuit of the controlled power transistor occurs.

Název v anglickém jazyce

HIGH FREQUENCY MULTIPURPOSE SIC MOSFET DRIVER

Popis výsledku anglicky

This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced driver enables to adjust the output voltage levels easily by choosing the integrated linear voltage stabilizers with suitable output parameters used for Printed Circuit Board (PCB) mounting. The voltage insulation of the proposed driver between the primary control side and the secondary output side is performed by MGJ6D12H24MC muRata Ps DC-DC converter with a declared dv/dt immunity 80 kV/1000 ms at 1.6 kV and by IX3180 IXYS High Speed gate driver optocouplers with a declared 10 kV/1000 ms minimum common mode rejection at 1.5 kV. The voltage insulation of these coupling elements is accompanied by safety gaps on the PCB. These insulation features enable the proposed driver to work on high frequencies as a high-side transistor of H-bridges as same as in other power converter topologies with a high frequency and high voltage stress of the insulation border. The proposed driver also provides the possibility of tripping the signal, when the short circuit of the controlled power transistor occurs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/LTE220001" target="_blank" >LTE220001: E-Town - Vývoj superlehkých malých elektrických vozidel s dlouhým dojezdem pro mezigenerační koncepce městské e-mobility využívající inteligentní infrastrukturu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advances in Electrical and Electronic Engineering

ISSN

1336-1376

e-ISSN

—

Svazek periodika

19

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

9

Strana od-do

203-211

Kód UT WoS článku

000703868400002

EID výsledku v databázi Scopus

—