Optimization of exposure parameters for direct laser writing in optical lithography

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F22%3A10251805" target="_blank" >RIV/61989100:27360/22:10251805 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989100:27740/22:10251805 RIV/61989100:27640/22:10251805

Výsledek na webu

<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12502/2664190/Optimization-of-exposure-parameters-for-direct-laser-writing-in-optical/10.1117/12.2664190.short?SSO=1" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12502/2664190/Optimization-of-exposure-parameters-for-direct-laser-writing-in-optical/10.1117/12.2664190.short?SSO=1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2664190" target="_blank" >10.1117/12.2664190</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of exposure parameters for direct laser writing in optical lithography

Popis výsledku v původním jazyce

Various types of nano- and micro-structures, such as security holograms and diffractive optical elements, can be prepared directly into a photoresist using a direct-write optical lithography. Precise knowledge of photoresist properties, parameters of exposure, and photoresist development time are essential. We have characterized and optimised exposure of the positive binary sensitive photoresist ma-P 1200 series. Complex optical functions ware obtained using Mueller matrix spectroscopic ellipsometry. True thickness profile of linearly exposed photoresist was studied by confocal microscopy and strong non-linearity was observed. In this paper we propose exposure correction to compensate this non-linearity. (C) 2022 SPIE.

Název v anglickém jazyce

Optimization of exposure parameters for direct laser writing in optical lithography

Popis výsledku anglicky

Various types of nano- and micro-structures, such as security holograms and diffractive optical elements, can be prepared directly into a photoresist using a direct-write optical lithography. Precise knowledge of photoresist properties, parameters of exposure, and photoresist development time are essential. We have characterized and optimised exposure of the positive binary sensitive photoresist ma-P 1200 series. Complex optical functions ware obtained using Mueller matrix spectroscopic ellipsometry. True thickness profile of linearly exposed photoresist was studied by confocal microscopy and strong non-linearity was observed. In this paper we propose exposure correction to compensate this non-linearity. (C) 2022 SPIE.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE - The International Society for Optical Engineering. Volume 12502

ISBN

978-1-5106-6111-0

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

5

Strana od-do

—

Název nakladatele

SPIE - The International Society for Optical Engineering

Místo vydání

Bellingham

Místo konání akce

Wojanów

Datum konání akce

6. 9. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000920988700021