Synthesis, Characterization, and Enhanced Optical and Dielectric Properties of Pure and Ni-Doped ZnO Nanoparticles for Advanced Electronic Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F25%3A10257600" target="_blank" >RIV/61989100:27360/25:10257600 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2590123025009016" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2590123025009016</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.rineng.2025.104824" target="_blank" >10.1016/j.rineng.2025.104824</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis, Characterization, and Enhanced Optical and Dielectric Properties of Pure and Ni-Doped ZnO Nanoparticles for Advanced Electronic Applications

Popis výsledku v původním jazyce

Nickel (Ni)-doped zinc oxide (ZnO) nanoparticles have garnered significant attention due to their tunable structural, optical, and electronic properties, making them ideal candidates for various advanced applications. This study focuses on the synthesis, characterization, and evaluation of the electrical and electronic properties of pure and Ni-doped ZnO nanoparticles (Ni:ZnO) synthesized via a co-precipitation method with varying Ni concentrations (2%, 4%, 6%, and 8%). X-ray diffraction analysis confirmed the wurtzite hexagonal structure of ZnO, with lattice distortion increasing proportionally to Ni doping. A secondary NiO phase was detected at higher doping levels, indicating the solubility limit of Ni in ZnO. The average crystallite size, calculated using Debye-Scherrer&apos;s equation, decreased from 31 nm in pure ZnO to 23 nm in 8% Ni-doped ZnO, confirming doping-induced size reduction. UV-visible spectroscopy revealed a blue shift in the optical bandgap from 3.23 eV for pure ZnO to 3.41 eV for 8% Ni-doped ZnO, attributed to Burstein-Moss effect. Fourier transform infrared spectroscopy identified changes in vibrational modes, with shifts in peaks corresponding to Zn-O and Ni-O bonds, indicating successful Ni incorporation. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy confirmed uniform particle morphology and elemental composition. Dielectric studies showed that the dielectric constant increased significantly with Ni doping, reaching a maximum value of 69 at 6% doping, while AC conductivity improved with frequency, demonstrating frequency-dependent conductivity due to hopping charge carriers. The findings reveal that Ni doping enhances the structural, optical, and dielectric properties of ZnO, making it suitable for optoelectronics, high-frequency devices, and dielectric materials.

Název v anglickém jazyce

Synthesis, Characterization, and Enhanced Optical and Dielectric Properties of Pure and Ni-Doped ZnO Nanoparticles for Advanced Electronic Applications

Popis výsledku anglicky

Nickel (Ni)-doped zinc oxide (ZnO) nanoparticles have garnered significant attention due to their tunable structural, optical, and electronic properties, making them ideal candidates for various advanced applications. This study focuses on the synthesis, characterization, and evaluation of the electrical and electronic properties of pure and Ni-doped ZnO nanoparticles (Ni:ZnO) synthesized via a co-precipitation method with varying Ni concentrations (2%, 4%, 6%, and 8%). X-ray diffraction analysis confirmed the wurtzite hexagonal structure of ZnO, with lattice distortion increasing proportionally to Ni doping. A secondary NiO phase was detected at higher doping levels, indicating the solubility limit of Ni in ZnO. The average crystallite size, calculated using Debye-Scherrer&apos;s equation, decreased from 31 nm in pure ZnO to 23 nm in 8% Ni-doped ZnO, confirming doping-induced size reduction. UV-visible spectroscopy revealed a blue shift in the optical bandgap from 3.23 eV for pure ZnO to 3.41 eV for 8% Ni-doped ZnO, attributed to Burstein-Moss effect. Fourier transform infrared spectroscopy identified changes in vibrational modes, with shifts in peaks corresponding to Zn-O and Ni-O bonds, indicating successful Ni incorporation. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy confirmed uniform particle morphology and elemental composition. Dielectric studies showed that the dielectric constant increased significantly with Ni doping, reaching a maximum value of 69 at 6% doping, while AC conductivity improved with frequency, demonstrating frequency-dependent conductivity due to hopping charge carriers. The findings reveal that Ni doping enhances the structural, optical, and dielectric properties of ZnO, making it suitable for optoelectronics, high-frequency devices, and dielectric materials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Results in Engineering

ISSN

2590-1230

e-ISSN

2590-1230

Svazek periodika

26

Číslo periodika v rámci svazku

104824

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

nestránkováno

Kód UT WoS článku

001469790700001

EID výsledku v databázi Scopus

2-s2.0-105002007394