Surface plasmon polaritons at linearly graded semiconductor interfaces

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F15%3A86095605" target="_blank" >RIV/61989100:27640/15:86095605 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1364/OE.23.006264" target="_blank" >http://dx.doi.org/10.1364/OE.23.006264</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OE.23.006264" target="_blank" >10.1364/OE.23.006264</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface plasmon polaritons at linearly graded semiconductor interfaces

Popis výsledku v původním jazyce

New results are reported on investigation of dispersion curves for surface plasmon polaritons (SPPs) at an inhomogenously doped semiconductor/dielectric interface whereby the dielectric is represented by the same undoped semiconductor. The doped semiconductor is described by its frequency-dependent permittivity that varies with the depth. It is shown that a transition layer (TL) with a linear change in carrier concentration supports one branch dispersion curve regardless of the TL thickness. The obtained dispersion curves reach a maximum at a finite frequency depending on the TL thickness, and subsequently asymptotically approach the zero frequency in the shortwave limit. Therefore two surface plasmon modes are supported at a given frequency: a long-wave mode with a positive group velocity and a short-wave mode with a negative group velocity. A condition of a zero group velocity can be satisfied by tuning the TL layer. It is shown that the conventional dispersion relation for SPPs at a

Název v anglickém jazyce

Surface plasmon polaritons at linearly graded semiconductor interfaces

Popis výsledku anglicky

New results are reported on investigation of dispersion curves for surface plasmon polaritons (SPPs) at an inhomogenously doped semiconductor/dielectric interface whereby the dielectric is represented by the same undoped semiconductor. The doped semiconductor is described by its frequency-dependent permittivity that varies with the depth. It is shown that a transition layer (TL) with a linear change in carrier concentration supports one branch dispersion curve regardless of the TL thickness. The obtained dispersion curves reach a maximum at a finite frequency depending on the TL thickness, and subsequently asymptotically approach the zero frequency in the shortwave limit. Therefore two surface plasmon modes are supported at a given frequency: a long-wave mode with a positive group velocity and a short-wave mode with a negative group velocity. A condition of a zero group velocity can be satisfied by tuning the TL layer. It is shown that the conventional dispersion relation for SPPs at a

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

OPTICS EXPRESS

ISSN

1094-4087

e-ISSN

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Svazek periodika

23

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

6264-6276

Kód UT WoS článku

000350878500076

EID výsledku v databázi Scopus

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