Plasmon Dispersion at an Interface Between a Dielectric and a Conducting Medium With Moving Electrons

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F16%3A86098070" target="_blank" >RIV/61989100:27640/16:86098070 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/JQE.2016.2560338" target="_blank" >http://dx.doi.org/10.1109/JQE.2016.2560338</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JQE.2016.2560338" target="_blank" >10.1109/JQE.2016.2560338</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Plasmon Dispersion at an Interface Between a Dielectric and a Conducting Medium With Moving Electrons

Popis výsledku v původním jazyce

Dispersion of the plasmonic behavior at an interface between a dielectric and a conducting medium (e.g. metal, doped semiconductor, graphine, or superconductor) is studied considering the free electron gas in the conducting medium be moving along the interface. The derivation of the dispersion equation is provided, including the damping and the electrons drift. It is shown that the electrons behave as a compressible gas giving rise to new features and new surface plasmon wave solutions of the dispersion equation. A normalized form of the derived dispersion equation is obtained. It is then employed to study the general properties numerically using typical semiconductor material parameters found recently experimentally. Results are discussed in the light of possible novel applications of these physical effects such as, for example, plasmons propagation loss compensation.

Název v anglickém jazyce

Plasmon Dispersion at an Interface Between a Dielectric and a Conducting Medium With Moving Electrons

Popis výsledku anglicky

Dispersion of the plasmonic behavior at an interface between a dielectric and a conducting medium (e.g. metal, doped semiconductor, graphine, or superconductor) is studied considering the free electron gas in the conducting medium be moving along the interface. The derivation of the dispersion equation is provided, including the damping and the electrons drift. It is shown that the electrons behave as a compressible gas giving rise to new features and new surface plasmon wave solutions of the dispersion equation. A normalized form of the derived dispersion equation is obtained. It is then employed to study the general properties numerically using typical semiconductor material parameters found recently experimentally. Results are discussed in the light of possible novel applications of these physical effects such as, for example, plasmons propagation loss compensation.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE journal of quantum electronics

ISSN

0018-9197

e-ISSN

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Svazek periodika

52

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000377086600001

EID výsledku v databázi Scopus

2-s2.0-84975496206