Magnetite-Free Sn-Doped Hematite Nanoflake Layers for Enhanced Photoelectrochemical Water Splitting

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F22%3A10249988" target="_blank" >RIV/61989100:27640/22:10249988 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989592:15640/22:73618691

Výsledek na webu

<a href="https://chemistry-europe.onlinelibrary.wiley.com/doi/epdf/10.1002/celc.202200066" target="_blank" >https://chemistry-europe.onlinelibrary.wiley.com/doi/epdf/10.1002/celc.202200066</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/celc.202200066" target="_blank" >10.1002/celc.202200066</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Magnetite-Free Sn-Doped Hematite Nanoflake Layers for Enhanced Photoelectrochemical Water Splitting

Popis výsledku v původním jazyce

In the present work, we report a preparation strategy for hematite phase-pure photoanodes consisting of Sn-doped hematite nanoflakes/hematite thin film bilayer nanostructure (Sn-HB). This approach is based on a two-step annealing process of pure iron films deposited on fluorine doped tin oxide (FTO) substrates by advanced magnetron sputtering. While the high density hematite ultrathin nanoflakes (HNs) with detrimental iron oxide layers (Fe3O4 and/or FeO) are generated during the first annealing step at 400 degrees C for two hours, the second thermal treatment at 800 degrees C for 15 minutes oxidises all the undesired iron oxide phases to a photoactive hematite layer as well as is providing efficient Sn doping of a drop-casted SnCl4 in order to increase the conductivity. The optimized Sn-HB shows an around 11 times higher photocurrent density (0.71 mA cm(-2) at 1.23 V-RHE) compared with a reference hematite photoanode produced from iron foil under the same conditions.

Název v anglickém jazyce

Magnetite-Free Sn-Doped Hematite Nanoflake Layers for Enhanced Photoelectrochemical Water Splitting

Popis výsledku anglicky

In the present work, we report a preparation strategy for hematite phase-pure photoanodes consisting of Sn-doped hematite nanoflakes/hematite thin film bilayer nanostructure (Sn-HB). This approach is based on a two-step annealing process of pure iron films deposited on fluorine doped tin oxide (FTO) substrates by advanced magnetron sputtering. While the high density hematite ultrathin nanoflakes (HNs) with detrimental iron oxide layers (Fe3O4 and/or FeO) are generated during the first annealing step at 400 degrees C for two hours, the second thermal treatment at 800 degrees C for 15 minutes oxidises all the undesired iron oxide phases to a photoactive hematite layer as well as is providing efficient Sn doping of a drop-casted SnCl4 in order to increase the conductivity. The optimized Sn-HB shows an around 11 times higher photocurrent density (0.71 mA cm(-2) at 1.23 V-RHE) compared with a reference hematite photoanode produced from iron foil under the same conditions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ChemElectroChem

ISSN

2196-0216

e-ISSN

2196-0216

Svazek periodika

9

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

nestrankovano

Kód UT WoS článku

000804081200001

EID výsledku v databázi Scopus

2-s2.0-85132340700