Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F25%3A10257262" target="_blank" >RIV/61989100:27710/25:10257262 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989100:27640/25:10257262

Výsledek na webu

<a href="https://www.webofscience.com/wos/woscc/full-record/WOS:001435917500001" target="_blank" >https://www.webofscience.com/wos/woscc/full-record/WOS:001435917500001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/adb6b6" target="_blank" >10.1088/1361-6463/adb6b6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties

Popis výsledku v původním jazyce

Graphene is an atomically thin material composed of a single layer of carbon atoms arranged in a hexagonal lattice, which exhibits unique electrical, thermal, and mechanical properties. The intentional introduction of foreign atoms into the structure of graphene by doping is a powerful approach for modifying these properties, making graphene suitable for a range of advanced applications. Among the various synthesis techniques, chemical vapor deposition (CVD) is particularly effective for doping because it allows precise control over the growth conditions and dopant incorporation, outperforming other synthesis strategies in terms of scalability, uniformity, and clean growth. This review examines how solid, liquid, and gaseous precursor types play crucial roles in CVD doping, directly affecting the growth dynamics, doping efficiency, and material quality. By analyzing the mechanisms associated with each precursor form, this review highlights how these strategies address the challenges of achieving consistent and high-quality doped graphene. This discussion provides valuable insight into advancing CVD techniques for producing doped graphene with enhanced properties for cutting-edge applications.

Název v anglickém jazyce

Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties

Popis výsledku anglicky

Graphene is an atomically thin material composed of a single layer of carbon atoms arranged in a hexagonal lattice, which exhibits unique electrical, thermal, and mechanical properties. The intentional introduction of foreign atoms into the structure of graphene by doping is a powerful approach for modifying these properties, making graphene suitable for a range of advanced applications. Among the various synthesis techniques, chemical vapor deposition (CVD) is particularly effective for doping because it allows precise control over the growth conditions and dopant incorporation, outperforming other synthesis strategies in terms of scalability, uniformity, and clean growth. This review examines how solid, liquid, and gaseous precursor types play crucial roles in CVD doping, directly affecting the growth dynamics, doping efficiency, and material quality. By analyzing the mechanisms associated with each precursor form, this review highlights how these strategies address the challenges of achieving consistent and high-quality doped graphene. This discussion provides valuable insight into advancing CVD techniques for producing doped graphene with enhanced properties for cutting-edge applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

21000 - Nano-technology

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics. D, Applied Physics

ISSN

0022-3727

e-ISSN

1361-6463

Svazek periodika

58

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

30

Strana od-do

153002

Kód UT WoS článku

001435917500001

EID výsledku v databázi Scopus

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