Graphene-Supported Atom-Sized Magnets for Data Storage: What Can We Learn from First-Principles Calculations?

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F23%3A10253163" target="_blank" >RIV/61989100:27740/23:10253163 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989592:15310/23:73621814 RIV/61989592:15640/23:73621814

Výsledek na webu

<a href="https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10228258" target="_blank" >https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10228258</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/INTERMAGShortPapers58606.2023.10228258" target="_blank" >10.1109/INTERMAGShortPapers58606.2023.10228258</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene-Supported Atom-Sized Magnets for Data Storage: What Can We Learn from First-Principles Calculations?

Popis výsledku v původním jazyce

Doping the graphene lattice with transition metal (TM) atoms has been identified as an effective strategy for obtaining high magnetic anisotropy energy (MAE), preventing thermally induced reorientation of magnetic moments between the easy and hard magnetization axes. Lattice imperfections such as atomic vacancies can anchor TM atoms or their clusters, preventing them from diffusing and agglomerating on the surface, ultimately allowing high MAEs of 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy (NSV) in the graphene lattice. Importantly, the lighter TM dimers, FeMn bound to two separate double-vacancy (DV) defects, can also exhibit a significant MAE of 120 meV when interacting with each other through the graphene lattice. The presence of Mn impurities associated with DV defects in the graphene lattice has been confirmed experimentally and can form anchors for the formation of FeMn dimers. For practical applications of graphene-supported magnetic dimers, the carbon sheet must be deposited on a solid support. A properly selected substrate can, to a large extent, allow for the preservation of a large MAE of dimers.

Název v anglickém jazyce

Graphene-Supported Atom-Sized Magnets for Data Storage: What Can We Learn from First-Principles Calculations?

Popis výsledku anglicky

Doping the graphene lattice with transition metal (TM) atoms has been identified as an effective strategy for obtaining high magnetic anisotropy energy (MAE), preventing thermally induced reorientation of magnetic moments between the easy and hard magnetization axes. Lattice imperfections such as atomic vacancies can anchor TM atoms or their clusters, preventing them from diffusing and agglomerating on the surface, ultimately allowing high MAEs of 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy (NSV) in the graphene lattice. Importantly, the lighter TM dimers, FeMn bound to two separate double-vacancy (DV) defects, can also exhibit a significant MAE of 120 meV when interacting with each other through the graphene lattice. The presence of Mn impurities associated with DV defects in the graphene lattice has been confirmed experimentally and can form anchors for the formation of FeMn dimers. For practical applications of graphene-supported magnetic dimers, the carbon sheet must be deposited on a solid support. A properly selected substrate can, to a large extent, allow for the preservation of a large MAE of dimers.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

—

Návaznosti

—

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 : proceedings

ISBN

979-8-3503-3836-2

ISSN

—

e-ISSN

—

Počet stran výsledku

2

Strana od-do

—

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Sendai

Datum konání akce

15. 5. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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