Removing Cadmium Impurities from Cation-Exchange-Derived CuInSe2/CuInS2 Nanorods for Enhanced Infrared Emission and Photodetection

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10254876" target="_blank" >RIV/61989100:27740/24:10254876 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.202400942" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.202400942</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adfm.202400942" target="_blank" >10.1002/adfm.202400942</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Removing Cadmium Impurities from Cation-Exchange-Derived CuInSe2/CuInS2 Nanorods for Enhanced Infrared Emission and Photodetection

Popis výsledku v původním jazyce

Metal chalcogenide nanocrystals with variable composition and shape can conveniently be produced using cation exchange synthesis; however, the presence of cation-containing ligands inherited from the starting material often results in contamination of the final product. To address this issue, a two-step ligand replacement strategy is developed to fabricate CuInSe2/CuInS2 nanorods from CdSe/CdS nanorods via removal of Cd-phosphonates from an intermediate Cu2-xSe/Cu2-xS phase used in the cation exchange conversion. This synthetic approach furnishes CuInSe2/CuInS2 nanorods with cadmium content below 1 at.%, and high photoluminescence quantum yields reaching 40% in the near-infrared spectral range. Transient absorption studies reveal that the band alignment in the CuInSe2/CuInS2 heterostructure features a quasi-type II character, with an electron localized in the core and a hole wavefunction spread over the entire nanorod. The efficient passivation of the core and the reduced Cd content leads to excitonic emission with full width at half maximum down to 110 meV, superimposed with a broad emission band from copper-induced defects. Field-effect transistors based on cadmium-free CuInSe2/CuInS2 nanorods show two orders of magnitude lower noise current density compared with the cadmium-rich devices. The responsivity and specific detectivity of these devices reach 230 mA W-1 and 10(8) Jones, respectively, under near-infrared excitation at room temperature.

Název v anglickém jazyce

Removing Cadmium Impurities from Cation-Exchange-Derived CuInSe2/CuInS2 Nanorods for Enhanced Infrared Emission and Photodetection

Popis výsledku anglicky

Metal chalcogenide nanocrystals with variable composition and shape can conveniently be produced using cation exchange synthesis; however, the presence of cation-containing ligands inherited from the starting material often results in contamination of the final product. To address this issue, a two-step ligand replacement strategy is developed to fabricate CuInSe2/CuInS2 nanorods from CdSe/CdS nanorods via removal of Cd-phosphonates from an intermediate Cu2-xSe/Cu2-xS phase used in the cation exchange conversion. This synthetic approach furnishes CuInSe2/CuInS2 nanorods with cadmium content below 1 at.%, and high photoluminescence quantum yields reaching 40% in the near-infrared spectral range. Transient absorption studies reveal that the band alignment in the CuInSe2/CuInS2 heterostructure features a quasi-type II character, with an electron localized in the core and a hole wavefunction spread over the entire nanorod. The efficient passivation of the core and the reduced Cd content leads to excitonic emission with full width at half maximum down to 110 meV, superimposed with a broad emission band from copper-induced defects. Field-effect transistors based on cadmium-free CuInSe2/CuInS2 nanorods show two orders of magnitude lower noise current density compared with the cadmium-rich devices. The responsivity and specific detectivity of these devices reach 230 mA W-1 and 10(8) Jones, respectively, under near-infrared excitation at room temperature.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Functional Materials

ISSN

1616-301X

e-ISSN

1616-3028

Svazek periodika

34

Číslo periodika v rámci svazku

34

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

001184056600001

EID výsledku v databázi Scopus

2-s2.0-85187535229