Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F23%3A10254134" target="_blank" >RIV/61989100:27740/23:10254134 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acs.chemmater.3c01144" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.chemmater.3c01144</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.chemmater.3c01144" target="_blank" >10.1021/acs.chemmater.3c01144</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

Popis výsledku v původním jazyce

HgTe nanocrystals are one of the most promising candidatesforoptoelectronic applications in short- and middle-range infrared wavelengthregions. Fabrication of one-dimensional anisotropic HgTe nanoparticleswith a wurtzite structure has been a challenging task, so far. Weintroduce a two-step cation-exchange strategy to synthesize wurtzite-phaseHgTe nanorods, starting from CdTe nanorods and proceeding throughthe formation of a Cu2-x Te intermediate.We demonstrate a means to tune the residual Cu content in the finalHgTe nanorods from tens to less than one at % by adjusting the oleylamineand N,N-dimethylethylenediamineconcentrations used during the Cu-to-Hg cation-exchange step. Thephotoluminescence peak position of the HgTe nanorods is tunable inthe broad spectral range from 1500 to 2500 nm with the decrease ofthe residual Cu content. Field-effect transistors based on fabricatedHgTe nanorods show favorable transport characteristics, namely, holemobilities up to 10(-2) cm(2)V(-1) s(-1) and on/off current ratio up to 10(3). The responsivity of photodetectors based on HgTe nanorods at 1340nm reaches 1 A/W, and the detectivity is up to 10(10) Jonesfor the devices with a simple planar geometry. Results presented hereindicate wide prospects for exploring the electronic properties ofwurtzite HgTe nanorods, as well as cation-doping and ligand surfacepassivation effects on device performance, which is of great importancefor the field of modern optoelectronics.

Název v anglickém jazyce

Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

Popis výsledku anglicky

HgTe nanocrystals are one of the most promising candidatesforoptoelectronic applications in short- and middle-range infrared wavelengthregions. Fabrication of one-dimensional anisotropic HgTe nanoparticleswith a wurtzite structure has been a challenging task, so far. Weintroduce a two-step cation-exchange strategy to synthesize wurtzite-phaseHgTe nanorods, starting from CdTe nanorods and proceeding throughthe formation of a Cu2-x Te intermediate.We demonstrate a means to tune the residual Cu content in the finalHgTe nanorods from tens to less than one at % by adjusting the oleylamineand N,N-dimethylethylenediamineconcentrations used during the Cu-to-Hg cation-exchange step. Thephotoluminescence peak position of the HgTe nanorods is tunable inthe broad spectral range from 1500 to 2500 nm with the decrease ofthe residual Cu content. Field-effect transistors based on fabricatedHgTe nanorods show favorable transport characteristics, namely, holemobilities up to 10(-2) cm(2)V(-1) s(-1) and on/off current ratio up to 10(3). The responsivity of photodetectors based on HgTe nanorods at 1340nm reaches 1 A/W, and the detectivity is up to 10(10) Jonesfor the devices with a simple planar geometry. Results presented hereindicate wide prospects for exploring the electronic properties ofwurtzite HgTe nanorods, as well as cation-doping and ligand surfacepassivation effects on device performance, which is of great importancefor the field of modern optoelectronics.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

—

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemistry of Materials

ISSN

0897-4756

e-ISSN

1520-5002

Svazek periodika

35

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

5631-5639

Kód UT WoS článku

001024281600001

EID výsledku v databázi Scopus

2-s2.0-85165680739