The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10255193" target="_blank" >RIV/61989100:27740/24:10255193 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/10.1002/adfm.202405307" target="_blank" >https://onlinelibrary.wiley.com/doi/10.1002/adfm.202405307</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adfm.202405307" target="_blank" >10.1002/adfm.202405307</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Popis výsledku v původním jazyce

Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7-100 mu m). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid-wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material&apos;s growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.

Název v anglickém jazyce

The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Popis výsledku anglicky

Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7-100 mu m). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid-wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material&apos;s growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Functional Materials

ISSN

1616-301X

e-ISSN

1616-3028

Svazek periodika

34

Číslo periodika v rámci svazku

39

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

32

Strana od-do

—

Kód UT WoS článku

001270555200001

EID výsledku v databázi Scopus

2-s2.0-85198698297