Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F17%3A73581544" target="_blank" >RIV/61989592:15310/17:73581544 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/17:10371030

Výsledek na webu

<a href="http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/12/05/P05003" target="_blank" >10.1088/1748-0221/12/05/P05003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)

Popis výsledku v původním jazyce

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 mu m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to 10(15) n(eq)/cm(2). The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of 3 x 10(14) n(eq)/cm(2), similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At 10(15) n(eq)/cm(2), the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.

Název v anglickém jazyce

Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)

Popis výsledku anglicky

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 mu m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to 10(15) n(eq)/cm(2). The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of 3 x 10(14) n(eq)/cm(2), similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At 10(15) n(eq)/cm(2), the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

—

Svazek periodika

12

Číslo periodika v rámci svazku

MAY 2017

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

17

Strana od-do

"P05003-1"-"P05003-17"

Kód UT WoS článku

000405076000003

EID výsledku v databázi Scopus

2-s2.0-85021139521