Výzkum elektronických vlastností, prvního a druhého stupně sfaleritového polovodiče A(XIII)B(XV

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67179843%3A_____%2F07%3A00098074" target="_blank" >RIV/67179843:_____/07:00098074 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60076658:12640/07:00008337

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of the electronic properties, first and second harmonic generation for A(XIII)B(XV) zinc-blende semiconductors

Popis výsledku v původním jazyce

Linearized-augmented plane wave (FP-LAPW) method. The results for the band structure, density of states, and the frequency-dependent linear and nonlinear optical response are present here. Our calculations show that these compounds have similar electronic structures. The valence band maximum (VBM) is located around Gamma and the conduction band minimum (CBM) is located around X resulting in an indirect energy band gap. The energy band gap of these compounds decreases when P is replaced by As and As by Sb. This can be attributed to the increases in bandwidth of the conduction bands when moving from P to As to Sb in agreement with the experimental data and previous theoretical calculations. The linear and nonlinear optical spectra are analyzed and the origin of some of the peaks in the spectra is discussed in terms of the calculated electronic structure.

Název v anglickém jazyce

Investigation of the electronic properties, first and second harmonic generation for A(XIII)B(XV) zinc-blende semiconductors

Popis výsledku anglicky

Linearized-augmented plane wave (FP-LAPW) method. The results for the band structure, density of states, and the frequency-dependent linear and nonlinear optical response are present here. Our calculations show that these compounds have similar electronic structures. The valence band maximum (VBM) is located around Gamma and the conduction band minimum (CBM) is located around X resulting in an indirect energy band gap. The energy band gap of these compounds decreases when P is replaced by As and As by Sb. This can be attributed to the increases in bandwidth of the conduction bands when moving from P to As to Sb in agreement with the experimental data and previous theoretical calculations. The linear and nonlinear optical spectra are analyzed and the origin of some of the peaks in the spectra is discussed in terms of the calculated electronic structure.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica. B

ISSN

0921-4526

e-ISSN

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Svazek periodika

395

Číslo periodika v rámci svazku

1-2

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

143-150

Kód UT WoS článku

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EID výsledku v databázi Scopus

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