The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00537850" target="_blank" >RIV/67985882:_____/20:00537850 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.orgel.2019.105545" target="_blank" >https://doi.org/10.1016/j.orgel.2019.105545</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.orgel.2019.105545" target="_blank" >10.1016/j.orgel.2019.105545</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions

Popis výsledku v původním jazyce

We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and p-type polymer (poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The ZnO NRs are synthesized by a low temperature two-step hydrothermal method on n-type silicon substrate. Scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and current-voltage (I-V) measurements are employed to study the morphology, charge transport, and device performance of the fabricated structures. Vertically aligned ZnO NRs are covered with a thick polymer layer to form an heterojunction based photodiode. Graphite and Gain eutectic (e-GaIn) are used as ohmic contacts to PEDOT:PPS film and Si substrate, respectively. Basic electrical parameters for e-GaIn/Si/ZnO/PEDOT:PSS/Graphite structure are calculated from the I-V characteristics. These structures also show high sensitivity to UV light illumination with a large degree of reproducibility. Furthermore, we demonstrate that by using the photovoltaic effect, the photodetector can operate as self-powered without consuming external energy

Název v anglickém jazyce

The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions

Popis výsledku anglicky

We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and p-type polymer (poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The ZnO NRs are synthesized by a low temperature two-step hydrothermal method on n-type silicon substrate. Scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and current-voltage (I-V) measurements are employed to study the morphology, charge transport, and device performance of the fabricated structures. Vertically aligned ZnO NRs are covered with a thick polymer layer to form an heterojunction based photodiode. Graphite and Gain eutectic (e-GaIn) are used as ohmic contacts to PEDOT:PPS film and Si substrate, respectively. Basic electrical parameters for e-GaIn/Si/ZnO/PEDOT:PSS/Graphite structure are calculated from the I-V characteristics. These structures also show high sensitivity to UV light illumination with a large degree of reproducibility. Furthermore, we demonstrate that by using the photovoltaic effect, the photodetector can operate as self-powered without consuming external energy

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA17-00355S" target="_blank" >GA17-00355S: Růstové mechanismy jednodimenzionálních polovodičových struktur na paternovaných substrátech</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Organic Electronics

ISSN

1566-1199

e-ISSN

—

Svazek periodika

77

Číslo periodika v rámci svazku

FEB

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

105545

Kód UT WoS článku

000517965600055

EID výsledku v databázi Scopus

2-s2.0-85075503845