Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00538001" target="_blank" >RIV/67985882:_____/20:00538001 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.mssp.2019.104808" target="_blank" >https://doi.org/10.1016/j.mssp.2019.104808</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2019.104808" target="_blank" >10.1016/j.mssp.2019.104808</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

Popis výsledku v původním jazyce

We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and the substrates locally modified by focused ion beam. The heterojunctions on focused ion beam-modified substrates show rectifying current-voltage characteristics, while the characteristics of the plain structures are symmetrical. Adsorption/desorption processes on the surface of ZnO nanorods strongly affect their electrical properties. We demonstrate that the electronic transport in the nanorods grown on focused ion beam-modified substrates is less sensitive to adsorption/desorption processes, which is related to their uniform nucleation and higher crystalline quality

Název v anglickém jazyce

Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

Popis výsledku anglicky

We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and the substrates locally modified by focused ion beam. The heterojunctions on focused ion beam-modified substrates show rectifying current-voltage characteristics, while the characteristics of the plain structures are symmetrical. Adsorption/desorption processes on the surface of ZnO nanorods strongly affect their electrical properties. We demonstrate that the electronic transport in the nanorods grown on focused ion beam-modified substrates is less sensitive to adsorption/desorption processes, which is related to their uniform nucleation and higher crystalline quality

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science in Semiconductor Processing

ISSN

1369-8001

e-ISSN

—

Svazek periodika

107

Číslo periodika v rámci svazku

1 March

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

104808

Kód UT WoS článku

000505017100013

EID výsledku v databázi Scopus

2-s2.0-85074342993