Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F21%3A00543277" target="_blank" >RIV/67985882:_____/21:00543277 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.3390/electronics10010045" target="_blank" >https://doi.org/10.3390/electronics10010045</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/electronics10010045" target="_blank" >10.3390/electronics10010045</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Popis výsledku v původním jazyce

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p-n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures

Název v anglickém jazyce

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Popis výsledku anglicky

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p-n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Electronics

ISSN

2079-9292

e-ISSN

2079-9292

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

20

Strana od-do

45

Kód UT WoS článku

000605825700001

EID výsledku v databázi Scopus

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