Structural insight into nanoscale inhomogeneity of electrical properties in highly conductive polycrystalline ZnO thin films doped using methane

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F24%3A00585283" target="_blank" >RIV/67985882:_____/24:00585283 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6463/ad1791" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6463/ad1791</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/ad1791" target="_blank" >10.1088/1361-6463/ad1791</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural insight into nanoscale inhomogeneity of electrical properties in highly conductive polycrystalline ZnO thin films doped using methane

Popis výsledku v původním jazyce

Recently, methane has been demonstrated as an effective n-type dopant for ZnO thin films deposited using the RF-magnetron sputtering method. It was shown that the major electrical doping effect of methane is caused by hydrogen released during methane decomposition. This work investigates the origin of the observed increase in conductivity of methane-doped ZnO films with the increase in thickness. The study is aimed at describing the nature of this thickness-dependent effect through a detailed analysis of the thickness-dependent morphology and crystalline structure. A combination of structural, electrical, and optical characterization revealed a transition from fine-grained films with a random orientation at early stages to partially (002)-textured films with columnar grains at later stages of growth. It is demonstrated that grain/sub-grain boundaries increase the electrical conductivity and that the contribution of such buried inner boundaries increases with increasing thickness. It is proposed that hydrogen diffuses along the grain and sub-grain boundaries during growth, leading to continuous doping of the buried interfaces. This hydrogen diffusion mechanism results in an apparent 'additional doping' of thicker films. The results provide new insights into the thickness-dependent conductivity of doped polycrystalline ZnO films mediated by hydrogen diffusion along internal interfaces.

Název v anglickém jazyce

Structural insight into nanoscale inhomogeneity of electrical properties in highly conductive polycrystalline ZnO thin films doped using methane

Popis výsledku anglicky

Recently, methane has been demonstrated as an effective n-type dopant for ZnO thin films deposited using the RF-magnetron sputtering method. It was shown that the major electrical doping effect of methane is caused by hydrogen released during methane decomposition. This work investigates the origin of the observed increase in conductivity of methane-doped ZnO films with the increase in thickness. The study is aimed at describing the nature of this thickness-dependent effect through a detailed analysis of the thickness-dependent morphology and crystalline structure. A combination of structural, electrical, and optical characterization revealed a transition from fine-grained films with a random orientation at early stages to partially (002)-textured films with columnar grains at later stages of growth. It is demonstrated that grain/sub-grain boundaries increase the electrical conductivity and that the contribution of such buried inner boundaries increases with increasing thickness. It is proposed that hydrogen diffuses along the grain and sub-grain boundaries during growth, leading to continuous doping of the buried interfaces. This hydrogen diffusion mechanism results in an apparent 'additional doping' of thicker films. The results provide new insights into the thickness-dependent conductivity of doped polycrystalline ZnO films mediated by hydrogen diffusion along internal interfaces.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GA23-05915S" target="_blank" >GA23-05915S: Transport elektrického náboje v heterostrukturách polovodičových oxidů s halogenidy mědi</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D-Applied Physics

ISSN

0022-3727

e-ISSN

1361-6463

Svazek periodika

57

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

155101

Kód UT WoS článku

001144948700001

EID výsledku v databázi Scopus

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