On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F22%3A00555968" target="_blank" >RIV/67985882:_____/22:00555968 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/26722445:_____/22:N0000049

Výsledek na webu

<a href="https://doi.org/10.1007/s10854-022-07814-9" target="_blank" >https://doi.org/10.1007/s10854-022-07814-9</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-022-07814-9" target="_blank" >10.1007/s10854-022-07814-9</a>

Jazyk výsledku

angličtina

Název v původním jazyce

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering

Popis výsledku v původním jazyce

A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films, however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane

Název v anglickém jazyce

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering

Popis výsledku anglicky

A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films, however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA20-24366S" target="_blank" >GA20-24366S: Studium mechanizmů transportu náboje přechodu grafen-polovodič</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science-Materials in Electronics

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

33

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

11

Strana od-do

6421-6431

Kód UT WoS článku

000753905600005

EID výsledku v databázi Scopus

2-s2.0-85124369355