Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00605602" target="_blank" >RIV/67985882:_____/25:00605602 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1109/TED.2024.3520547" target="_blank" >https://doi.org/10.1109/TED.2024.3520547</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2024.3520547" target="_blank" >10.1109/TED.2024.3520547</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity

Popis výsledku v původním jazyce

This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures' fundamental electrical parameters were extracted from the I-V response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mAW-1, with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, shortcircuit current density, and ideality factor of 0.28 V, 237.2 mu Acm(-2), and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical- mathematical-numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring

Název v anglickém jazyce

Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity

Popis výsledku anglicky

This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures' fundamental electrical parameters were extracted from the I-V response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mAW-1, with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, shortcircuit current density, and ideality factor of 0.28 V, 237.2 mu Acm(-2), and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical- mathematical-numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Svazek periodika

72

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

TN - Tuniská republika

Počet stran výsledku

6

Strana od-do

755-760

Kód UT WoS článku

001389652400001

EID výsledku v databázi Scopus

2-s2.0-85216101744