Silicon p-i-n photodiode with reduced crystallographic defect density and structured surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00619143" target="_blank" >RIV/67985882:_____/25:00619143 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1361-6463/adbd4d" target="_blank" >https://doi.org/10.1088/1361-6463/adbd4d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/adbd4d" target="_blank" >10.1088/1361-6463/adbd4d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Silicon p-i-n photodiode with reduced crystallographic defect density and structured surface

Popis výsledku v původním jazyce

This paper reports new methods for reducing the density of structural defects on the surfaces of silicon p-i-n photodiodes (PDs). We experimentally proved that removing the silicon layer with packing defects, which are formed during oxidation, significantly contributes to reducing the density of the dislocations generated after phosphorus diffusion. Compared with the classical diffusion-planar technology for the preparation of silicon-based p-i-n PDs, our methods improve the parameters of PDs, especially dark current, sensitivity, noise equivalent power etc. Removal of the silicon layer is realized by carrying out chemical-dynamic polishing of the wafers after thermal oxidation in the areas of responsive elements. Although the optimum thickness of the etched silicon layer is about 2 mu m, which corresponds to an etching time of 30 s, even taking into account the fact that the detector properties will deteriorate with increasing etching time, the change in the 'maximum spectral response' is positive. It is demonstrated that the chemical-dynamic polishing is a powerful tool to modify spectral characteristics of PD sensitivity. The maximum of the spectral response can be accurately tailored in a wide spectral range from by changing the chemical-dynamic polishing parameters

Název v anglickém jazyce

Silicon p-i-n photodiode with reduced crystallographic defect density and structured surface

Popis výsledku anglicky

This paper reports new methods for reducing the density of structural defects on the surfaces of silicon p-i-n photodiodes (PDs). We experimentally proved that removing the silicon layer with packing defects, which are formed during oxidation, significantly contributes to reducing the density of the dislocations generated after phosphorus diffusion. Compared with the classical diffusion-planar technology for the preparation of silicon-based p-i-n PDs, our methods improve the parameters of PDs, especially dark current, sensitivity, noise equivalent power etc. Removal of the silicon layer is realized by carrying out chemical-dynamic polishing of the wafers after thermal oxidation in the areas of responsive elements. Although the optimum thickness of the etched silicon layer is about 2 mu m, which corresponds to an etching time of 30 s, even taking into account the fact that the detector properties will deteriorate with increasing etching time, the change in the 'maximum spectral response' is positive. It is demonstrated that the chemical-dynamic polishing is a powerful tool to modify spectral characteristics of PD sensitivity. The maximum of the spectral response can be accurately tailored in a wide spectral range from by changing the chemical-dynamic polishing parameters

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D-Applied Physics

ISSN

0022-3727

e-ISSN

1361-6463

Svazek periodika

58

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

165106

Kód UT WoS článku

001444333900001

EID výsledku v databázi Scopus

2-s2.0-105000024565