TEM study of oxide precipitates and other microstructural defects in Czochralski-grown silicon after various heat treatments
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F11%3A00370027" target="_blank" >RIV/68081723:_____/11:00370027 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
TEM study of oxide precipitates and other microstructural defects in Czochralski-grown silicon after various heat treatments
Popis výsledku v původním jazyce
A detailed modelling of the defect nucleation and growth in Si wafers is complicated due to a large number of process parameters along the production path. That is why experimental data obtained using various methods are needed to achieve more realisticmodels and outputs. As a part of a complex study of nucleation and growth of oxygen precipitates Czochralski-grown silicon crystals, this paper reports our latest results obtained by TEM. Among other experimental methods such as IR absorption or X-ray diffraction, TEM is irreplaceable in the direct visualization and characterization of precipitates and associated deffects.
Název v anglickém jazyce
TEM study of oxide precipitates and other microstructural defects in Czochralski-grown silicon after various heat treatments
Popis výsledku anglicky
A detailed modelling of the defect nucleation and growth in Si wafers is complicated due to a large number of process parameters along the production path. That is why experimental data obtained using various methods are needed to achieve more realisticmodels and outputs. As a part of a complex study of nucleation and growth of oxygen precipitates Czochralski-grown silicon crystals, this paper reports our latest results obtained by TEM. Among other experimental methods such as IR absorption or X-ray diffraction, TEM is irreplaceable in the direct visualization and characterization of precipitates and associated deffects.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů