Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F17%3A00495539" target="_blank" >RIV/68081723:_____/17:00495539 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/17:10369827

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4997404" target="_blank" >http://dx.doi.org/10.1063/1.4997404</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4997404" target="_blank" >10.1063/1.4997404</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

Popis výsledku v původním jazyce

A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector. Published by AIP Publishing.

Název v anglickém jazyce

Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

Popis výsledku anglicky

A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector. Published by AIP Publishing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

111

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000408570000013

EID výsledku v databázi Scopus

2-s2.0-85028539418