The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-delta films
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F23%3A00570601" target="_blank" >RIV/68081723:_____/23:00570601 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/00216305:26620/23:PU148607
Výsledek na webu
<a href="https://link.springer.com/article/10.1007/s00339-023-06486-4" target="_blank" >https://link.springer.com/article/10.1007/s00339-023-06486-4</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s00339-023-06486-4" target="_blank" >10.1007/s00339-023-06486-4</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-delta films
Popis výsledku v původním jazyce
In this work, we carefully examined how Ir substitution into Fe sites can change the band of the LuFeO3 (LFO) material. LFO and Ir-doped LFO (LuFe1-xIrxO3 or LFIO for short, where x = 0.05 and 0.10) thin films were synthesized by utilizing magnetron sputtering techniques. The films were grown on silicon and indium tin oxide (ITO) substrates at 500 degrees C. The crystallographic orientation of the films was examined using X-ray diffraction (XRD) analysis. The crystallographic orientation of the thin films was examined using an X-ray diffractometer (XRD). For surface topography research, atomic force microscopy (AFM) was employed. To look for the recombination of photogenerated electron-hole pairs in the materials under investigation, photoluminescence (PL) spectroscopy was used. Raman spectroscopy is then utilized to gather data on crystal symmetry as well as disorders and defects in the oxide materials. It was demonstrated that the LFO band gap was altered from 2.35 to 2.72 eV by Ir substitution into Fe sites. Moreover, diffuse reflectance spectroscopy (DRS) was used to analyze conductivity, real and imaginary components of the dielectric constant, refractive index (n), extinction coefficient (k), and reflectance percentage.
Název v anglickém jazyce
The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-delta films
Popis výsledku anglicky
In this work, we carefully examined how Ir substitution into Fe sites can change the band of the LuFeO3 (LFO) material. LFO and Ir-doped LFO (LuFe1-xIrxO3 or LFIO for short, where x = 0.05 and 0.10) thin films were synthesized by utilizing magnetron sputtering techniques. The films were grown on silicon and indium tin oxide (ITO) substrates at 500 degrees C. The crystallographic orientation of the films was examined using X-ray diffraction (XRD) analysis. The crystallographic orientation of the thin films was examined using an X-ray diffractometer (XRD). For surface topography research, atomic force microscopy (AFM) was employed. To look for the recombination of photogenerated electron-hole pairs in the materials under investigation, photoluminescence (PL) spectroscopy was used. Raman spectroscopy is then utilized to gather data on crystal symmetry as well as disorders and defects in the oxide materials. It was demonstrated that the LFO band gap was altered from 2.35 to 2.72 eV by Ir substitution into Fe sites. Moreover, diffuse reflectance spectroscopy (DRS) was used to analyze conductivity, real and imaginary components of the dielectric constant, refractive index (n), extinction coefficient (k), and reflectance percentage.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Physics A - Materials Science & Processing
ISSN
0947-8396
e-ISSN
1432-0630
Svazek periodika
129
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
DE - Spolková republika Německo
Počet stran výsledku
14
Strana od-do
198
Kód UT WoS článku
000935899600001
EID výsledku v databázi Scopus
2-s2.0-85148488069