Shaped E-beam nanopatterning with proximity effect correction

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Shaped E-beam nanopatterning with proximity effect correction

Popis výsledku v původním jazyce

Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximityeffect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and

Název v anglickém jazyce

Shaped E-beam nanopatterning with proximity effect correction

Popis výsledku anglicky

Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximityeffect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012, 4th International Conference Proceedings

ISBN

978-80-87294-32-1

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

717-722

Název nakladatele

TANGER Ltd

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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