Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures

Popis výsledku v původním jazyce

A proximity effect simulation technique and developed resist profile simulation for variable-shaped e-beam lithography of three dimensional structures are presented. The e-beam lithography is a technology process which allows high resolution patterning.Most frequently it is used for microfabrication or nanofabrication of two dimensional relief structures such as resist photo masks, etching masks, diffraction gratings, micro and nano optics, photonics and more. However, in the case of the 3D structurespatterning the precise thickness control of developed resist is required. With regard to subsequent proximity effect correction, the proximity effect simulation and developed resist profile simulation models are in the case of 3D structures fabrication critically important. We show the results from simulation of exposure and resist development process for the chosen polymer resist (PMMA), using the patterning and simulation e-beam lithography software.

Název v anglickém jazyce

Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures

Popis výsledku anglicky

A proximity effect simulation technique and developed resist profile simulation for variable-shaped e-beam lithography of three dimensional structures are presented. The e-beam lithography is a technology process which allows high resolution patterning.Most frequently it is used for microfabrication or nanofabrication of two dimensional relief structures such as resist photo masks, etching masks, diffraction gratings, micro and nano optics, photonics and more. However, in the case of the 3D structurespatterning the precise thickness control of developed resist is required. With regard to subsequent proximity effect correction, the proximity effect simulation and developed resist profile simulation models are in the case of 3D structures fabrication critically important. We show the results from simulation of exposure and resist development process for the chosen polymer resist (PMMA), using the patterning and simulation e-beam lithography software.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012, 4th International Conference Proceedings

ISBN

978-80-87294-32-1

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

729-732

Název nakladatele

TANGER Ltd

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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