Study of spatial resolution of YAG:Ce cathodoluminescent imaging screens

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F13%3A00397715" target="_blank" >RIV/68081731:_____/13:00397715 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2013.05.006" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2013.05.006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2013.05.006" target="_blank" >10.1016/j.nimb.2013.05.006</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of spatial resolution of YAG:Ce cathodoluminescent imaging screens

Popis výsledku v původním jazyce

The aim of this paper is to find spatial resolution of YAG:Ce single crystal cathodoluminescent imaging screens at primary electron energies in the range from 20 to 100 keV using theoretical simulation as well as the experimental method. Calculations have been based on the MC model for energy distribution of excited electrons. Measurement of the spatial resolution was realized using the sharp edge projection method. As the projection object, the silicon single crystal plate with the hole made by the anisotropic etching was prepared and used. The edge of this object was examined at the magnification of up to 125,000x. For the edge projection method, the experimental system with the screen specimen cartridge and with the light-microscopic module using the magnifying objective and the CCD camera has been constructed and used. The simulated as well as experimental results have been processed and are presented in the form of line spread function (LSF). The resulted image qualities were quan

Název v anglickém jazyce

Study of spatial resolution of YAG:Ce cathodoluminescent imaging screens

Popis výsledku anglicky

The aim of this paper is to find spatial resolution of YAG:Ce single crystal cathodoluminescent imaging screens at primary electron energies in the range from 20 to 100 keV using theoretical simulation as well as the experimental method. Calculations have been based on the MC model for energy distribution of excited electrons. Measurement of the spatial resolution was realized using the sharp edge projection method. As the projection object, the silicon single crystal plate with the hole made by the anisotropic etching was prepared and used. The edge of this object was examined at the magnification of up to 125,000x. For the edge projection method, the experimental system with the screen specimen cartridge and with the light-microscopic module using the magnifying objective and the CCD camera has been constructed and used. The simulated as well as experimental results have been processed and are presented in the form of line spread function (LSF). The resulted image qualities were quan

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

308

Číslo periodika v rámci svazku

1 August

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

68-73

Kód UT WoS článku

000321484400013

EID výsledku v databázi Scopus

—