Nanostructured ZnO films with various morphologies prepared by ultrasonic spray pyrolysis and its growing process

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F13%3A00397870" target="_blank" >RIV/68081731:_____/13:00397870 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2013.07.060" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2013.07.060</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2013.07.060" target="_blank" >10.1016/j.apsusc.2013.07.060</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructured ZnO films with various morphologies prepared by ultrasonic spray pyrolysis and its growing process

Popis výsledku v původním jazyce

Nanostructured ZnO films were prepared by the ultrasonic spray pyrolysis method using Zn(CH3COO)(2)center dot 2H(2)O as a precursor. The effects of substrate temperature (T-s) on the morphology and properties were systematically studied. As the T-s increased from 430 degrees C to 610 degrees C, the morphology of the film transforms from closed packed nanosheets to dense nanocrystalline film and then to hexagonal nanorod array. The dense film formed at a temperature of 550 degrees C has the lowest electric resistivity and highest carrier concentration. The optical transmittance for all prepared samples was higher than 90%. The photoluminescence (PL) properties varied with the T-s due to the internal defect difference. The growth mechanism of ZnO film involves island growth and diffusion, which was evident by observing the samples prepared at various times. (C) 2013 Elsevier B.V. All rights reserved.

Název v anglickém jazyce

Nanostructured ZnO films with various morphologies prepared by ultrasonic spray pyrolysis and its growing process

Popis výsledku anglicky

Nanostructured ZnO films were prepared by the ultrasonic spray pyrolysis method using Zn(CH3COO)(2)center dot 2H(2)O as a precursor. The effects of substrate temperature (T-s) on the morphology and properties were systematically studied. As the T-s increased from 430 degrees C to 610 degrees C, the morphology of the film transforms from closed packed nanosheets to dense nanocrystalline film and then to hexagonal nanorod array. The dense film formed at a temperature of 550 degrees C has the lowest electric resistivity and highest carrier concentration. The optical transmittance for all prepared samples was higher than 90%. The photoluminescence (PL) properties varied with the T-s due to the internal defect difference. The growth mechanism of ZnO film involves island growth and diffusion, which was evident by observing the samples prepared at various times. (C) 2013 Elsevier B.V. All rights reserved.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

<a href="/cs/project/ED0017%2F01%2F01" target="_blank" >ED0017/01/01: APLIKACNÍ A VÝVOJOVÉ LABORATORE POKROCILÝCH MIKROTECHNOLOGIÍ A NANOTECHNOLOGIÍ</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

283

Číslo periodika v rámci svazku

15 October

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

1006-1011

Kód UT WoS článku

000323601700144

EID výsledku v databázi Scopus

—