Effect of oxidation annealing on optical properties of YAG:Ce single crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F15%3A00445409" target="_blank" >RIV/68081731:_____/15:00445409 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.optmat.2015.05.035" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2015.05.035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2015.05.035" target="_blank" >10.1016/j.optmat.2015.05.035</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of oxidation annealing on optical properties of YAG:Ce single crystals

Popis výsledku v původním jazyce

YAG:Ce single crystals were annealed in air atmosphere at different temperatures. Their optical properties, such as optical absorption, cathodoluminescence spectra, cathodoluminescence decay and thermoluminescence were studied. Growth of UV absorption with increasing annealing temperature is explained by ionization of Ce3+ ions during the oxidation annealing and consequent ligand-to-metal charge transfer to the Ce4+ ions. Near-UV luminescence emission caused by presence of the antisite defects is undesirable for fast scintillation applications. After oxidation annealing, the emission related to the antisite defects is partially quenched due to the spectral overlap of the charge transfer absorption and the antisite defects emission. Together with suppression of electron traps due to the oxidation annealing, the described mechanism effectively decreases luminescence afterglow and improves YAG:Ce scintillation characteristics.

Název v anglickém jazyce

Effect of oxidation annealing on optical properties of YAG:Ce single crystals

Popis výsledku anglicky

YAG:Ce single crystals were annealed in air atmosphere at different temperatures. Their optical properties, such as optical absorption, cathodoluminescence spectra, cathodoluminescence decay and thermoluminescence were studied. Growth of UV absorption with increasing annealing temperature is explained by ionization of Ce3+ ions during the oxidation annealing and consequent ligand-to-metal charge transfer to the Ce4+ ions. Near-UV luminescence emission caused by presence of the antisite defects is undesirable for fast scintillation applications. After oxidation annealing, the emission related to the antisite defects is partially quenched due to the spectral overlap of the charge transfer absorption and the antisite defects emission. Together with suppression of electron traps due to the oxidation annealing, the described mechanism effectively decreases luminescence afterglow and improves YAG:Ce scintillation characteristics.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

—

Svazek periodika

46

Číslo periodika v rámci svazku

AUG 2015

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

591-595

Kód UT WoS článku

000357350700095

EID výsledku v databázi Scopus

2-s2.0-84930824636