Multicomponent garnet film scintillators for SEM electron detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F16%3A00465105" target="_blank" >RIV/68081731:_____/16:00465105 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/9783527808465.EMC2016.5236" target="_blank" >http://dx.doi.org/10.1002/9783527808465.EMC2016.5236</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/9783527808465.EMC2016.5236" target="_blank" >10.1002/9783527808465.EMC2016.5236</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Multicomponent garnet film scintillators for SEM electron detectors

Popis výsledku v původním jazyce

With an Everhart-Thornley (ET) scintillation detector in SEM, an image is formed by signal electrons emerged after an interaction of focused scanning electron beam with the specimen surface. In such a case a scintillator plays an important role as a fast electron-photon signal conversion element. A selection of fast scintillation materials is very limited, because the only mechanism for scintillators applicable in SEM ET detectors consists in allowed 5d-4f transitions in lanthanide ions. Unfortunately, the widely used Czochralski grown single crystal YAG:Ce scintillators suffer from an afterglow, which deteriorate the ability to transfer high image contrast. The mentioned afterglow in the bulk single crystal is caused by inevitable structural defects, such as antisite defects. These trap states are responsible not only for delayed radiative recombination causing the afterglow, but also for a degradation of the light yield. The aim of this study is to introduce new multicomponent garnet film scintillators for SEM electron detectors that due to the substitution of Al by Ga in the Gd3Al5O12:Ce garnet extensively supress the shallow traps resulting in a significant increase of the cathodoluminescence (CL) efficiency and in improvement of the afterglow characteristics.

Název v anglickém jazyce

Multicomponent garnet film scintillators for SEM electron detectors

Popis výsledku anglicky

With an Everhart-Thornley (ET) scintillation detector in SEM, an image is formed by signal electrons emerged after an interaction of focused scanning electron beam with the specimen surface. In such a case a scintillator plays an important role as a fast electron-photon signal conversion element. A selection of fast scintillation materials is very limited, because the only mechanism for scintillators applicable in SEM ET detectors consists in allowed 5d-4f transitions in lanthanide ions. Unfortunately, the widely used Czochralski grown single crystal YAG:Ce scintillators suffer from an afterglow, which deteriorate the ability to transfer high image contrast. The mentioned afterglow in the bulk single crystal is caused by inevitable structural defects, such as antisite defects. These trap states are responsible not only for delayed radiative recombination causing the afterglow, but also for a degradation of the light yield. The aim of this study is to introduce new multicomponent garnet film scintillators for SEM electron detectors that due to the substitution of Al by Ga in the Gd3Al5O12:Ce garnet extensively supress the shallow traps resulting in a significant increase of the cathodoluminescence (CL) efficiency and in improvement of the afterglow characteristics.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EMC2016. The 16th European Microscopy Congress. Proceedings

ISBN

9783527808465

ISSN

—

e-ISSN

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Počet stran výsledku

2

Strana od-do

374-375

Název nakladatele

Wiley

Místo vydání

Oxford

Místo konání akce

Lyon

Datum konání akce

28. 8. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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