PEC Reliability in 3D E-beam DOE Nanopatterning
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F15%3A00451587" target="_blank" >RIV/68081731:_____/15:00451587 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1017/S1431927615013422" target="_blank" >http://dx.doi.org/10.1017/S1431927615013422</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1017/S1431927615013422" target="_blank" >10.1017/S1431927615013422</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
PEC Reliability in 3D E-beam DOE Nanopatterning
Popis výsledku v původním jazyce
Diffractive optical elements (DOE) such as computer generated holograms (CGH) and blazed gratings are commonly used in coherent optics (beam splitters, beam shapers, diffusers)and security features. High quality preparation of these structures is necessary to obtain designed properties. Electron beam lithography (EBL) is one of method which allows creating fine structures in high resolution. The most undesired influence during the preparation of structures by EBL is proximity effect causing the adjacentregions to exposed one will receive non-zero dose. This effect is described by point spread function (PSF) which represents the absorbed energy distribution in radial distance from the point of incidence after point exposure. These PSF are usually obtained by Monte Carlo simulation in different programs (using various MC models). If the PSF function is known it can be used for proximity effect correction (PEC). Approximation of PSF can be done and then the key parameters (?, ?, ?) can b
Název v anglickém jazyce
PEC Reliability in 3D E-beam DOE Nanopatterning
Popis výsledku anglicky
Diffractive optical elements (DOE) such as computer generated holograms (CGH) and blazed gratings are commonly used in coherent optics (beam splitters, beam shapers, diffusers)and security features. High quality preparation of these structures is necessary to obtain designed properties. Electron beam lithography (EBL) is one of method which allows creating fine structures in high resolution. The most undesired influence during the preparation of structures by EBL is proximity effect causing the adjacentregions to exposed one will receive non-zero dose. This effect is described by point spread function (PSF) which represents the absorbed energy distribution in radial distance from the point of incidence after point exposure. These PSF are usually obtained by Monte Carlo simulation in different programs (using various MC models). If the PSF function is known it can be used for proximity effect correction (PEC). Approximation of PSF can be done and then the key parameters (?, ?, ?) can b
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/LO1212" target="_blank" >LO1212: ALISI - Centrum pokročilých diagnostických metod a technologií</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2015
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Microscopy and Microanalysis
ISSN
1431-9276
e-ISSN
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Svazek periodika
21
Číslo periodika v rámci svazku
S4
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
6
Strana od-do
230-235
Kód UT WoS článku
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EID výsledku v databázi Scopus
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