Design of Setup for Laser Induced Plasma Etching

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F24%3A00617414" target="_blank" >RIV/68081731:_____/24:00617414 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/10652276" target="_blank" >https://ieeexplore.ieee.org/document/10652276</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/IVNC63480.2024.10652276" target="_blank" >10.1109/IVNC63480.2024.10652276</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Design of Setup for Laser Induced Plasma Etching

Popis výsledku v původním jazyce

Plasma etching introduces a physically activated chemical process highly utilized in the semiconductor industry. However, for the creation of etched structures mask has to be prepared on top of the etched surfaces. This is usually achieved by electron beam lithography, which adds to the complexity and financial demands of the overall process. We present the design of a setup for maskless plasma etching, which utilizes a tightly focused ultrashort laser pulse for the ignition of etching plasma in a custom vacuum chamber with a connection to a gas-containing etching species. In addition, etched structures are written into the surface of sample by scanning with the vacuum chamber with relation to fixed laser focus. This enables maskless 3D etching of samples with a less complicated technological process.

Název v anglickém jazyce

Design of Setup for Laser Induced Plasma Etching

Popis výsledku anglicky

Plasma etching introduces a physically activated chemical process highly utilized in the semiconductor industry. However, for the creation of etched structures mask has to be prepared on top of the etched surfaces. This is usually achieved by electron beam lithography, which adds to the complexity and financial demands of the overall process. We present the design of a setup for maskless plasma etching, which utilizes a tightly focused ultrashort laser pulse for the ignition of etching plasma in a custom vacuum chamber with a connection to a gas-containing etching species. In addition, etched structures are written into the surface of sample by scanning with the vacuum chamber with relation to fixed laser focus. This enables maskless 3D etching of samples with a less complicated technological process.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/TN02000020" target="_blank" >TN02000020: Centrum pokročilé elektronové a fotonové optiky</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2024 37th International Vacuum Nanoelectronics Conference, IVNC 2024

ISBN

979-8-3503-7977-8

ISSN

2164-2370

e-ISSN

—

Počet stran výsledku

2

Strana od-do

44-45

Název nakladatele

IEEE

Místo vydání

New York

Místo konání akce

Brno

Datum konání akce

15. 7. 2024

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001310530600005