Stability of masking materials for pattern transfer of lithographic masks into fused silica by atmospheric pressure plasma jet etching

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00643245" target="_blank" >RIV/68081731:_____/25:00643245 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2590007225000152" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2590007225000152</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mne.2025.100309" target="_blank" >10.1016/j.mne.2025.100309</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Stability of masking materials for pattern transfer of lithographic masks into fused silica by atmospheric pressure plasma jet etching

Popis výsledku v původním jazyce

Masking of thin films and bulk materials is traditionally applied for the transfer of micron patterns into the functional material according to the requirements of the application. For optical purposes, lithographically produced micron patterns are transferred by plasma/ion etching, which is a traditional technology in microelectronics and other micron technologies. However, pattern transfer by atmospheric pressure plasma etching can help to save time and cost for a future sustainable production. Therefore, the pattern transfer of lithographic resist masks into fused silica using atmospheric pressure reactive plasma jets (APPJ) was studied as a new approach of micropatterning. First the etch rates of the potential masking materials, e.g. photoresists, as well as of fused silica as substrate are studied in dependence on the APPJ etching parameters, in particular on the gas composition (O-2/CF4) and the dwell time of the APPJ tool's footprint. Typical etch rates of the masking materials are in the range of 140 to 370 nm<middle dot>s(-1) whereas the fused silica has a rate of 25 to 80 nm<middle dot>s(-1). The surface morphology of masking materials changes during etching and features additional nanoscale roughness and waviness. The surface roughness of the etched masking materials and the fused silica are 2 to 5 nm rms and 1.5 nm rms for etch depths of similar to 3000 nm and similar to 600 nm, respectively. Finally, the pattern transfer by APPJ of a diffraction grating with a period of 15 mu m, depth of 230 nm and a roughness below 2 nm rms into fused silica was demonstrated.

Název v anglickém jazyce

Stability of masking materials for pattern transfer of lithographic masks into fused silica by atmospheric pressure plasma jet etching

Popis výsledku anglicky

Masking of thin films and bulk materials is traditionally applied for the transfer of micron patterns into the functional material according to the requirements of the application. For optical purposes, lithographically produced micron patterns are transferred by plasma/ion etching, which is a traditional technology in microelectronics and other micron technologies. However, pattern transfer by atmospheric pressure plasma etching can help to save time and cost for a future sustainable production. Therefore, the pattern transfer of lithographic resist masks into fused silica using atmospheric pressure reactive plasma jets (APPJ) was studied as a new approach of micropatterning. First the etch rates of the potential masking materials, e.g. photoresists, as well as of fused silica as substrate are studied in dependence on the APPJ etching parameters, in particular on the gas composition (O-2/CF4) and the dwell time of the APPJ tool's footprint. Typical etch rates of the masking materials are in the range of 140 to 370 nm<middle dot>s(-1) whereas the fused silica has a rate of 25 to 80 nm<middle dot>s(-1). The surface morphology of masking materials changes during etching and features additional nanoscale roughness and waviness. The surface roughness of the etched masking materials and the fused silica are 2 to 5 nm rms and 1.5 nm rms for etch depths of similar to 3000 nm and similar to 600 nm, respectively. Finally, the pattern transfer by APPJ of a diffraction grating with a period of 15 mu m, depth of 230 nm and a roughness below 2 nm rms into fused silica was demonstrated.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/EH22_008%2F0004624" target="_blank" >EH22_008/0004624: PHOTOMACHINES-Reorganizace fotosyntetických buněk za účelem vysoké produkce terapeutických peptidů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Micro and Nano Engineering

ISSN

2590-0072

e-ISSN

2590-0072

Svazek periodika

28

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

100309

Kód UT WoS článku

001541364800001

EID výsledku v databázi Scopus

2-s2.0-105011174452