Atmospheric pressure plasma jet pattern transfer using photolithographic masks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00648767" target="_blank" >RIV/68081731:_____/25:00648767 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13789/3073444/Atmospheric-pressure-plasma-jet-pattern-transfer-using-photolithographic-masks/10.1117/12.3073444.full" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13789/3073444/Atmospheric-pressure-plasma-jet-pattern-transfer-using-photolithographic-masks/10.1117/12.3073444.full</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.3073444" target="_blank" >10.1117/12.3073444</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atmospheric pressure plasma jet pattern transfer using photolithographic masks

Popis výsledku v původním jazyce

The transfer of photolithographically generated structures using ion beams/plasmas is a widely used technology with a wide range of applications. However, these techniques generally require expensive and high-maintenance vacuum systems, which is why a new atmospheric approach of pattern transfer is being pursued using atmospheric pressure plasma jet (APPJ) etching. In the present study, pattern transfer by plasma jet with a photopolymer masking into fused silica as a substrate is investigated. Etching was carried out with varying mask line widths and then subsequently analyzed using white light interferometry (WLI) and atomic force microscopy (AFM). It was shown that structures can be transferred into fused silica using a standard photoresist (AZ 4562). The faster etching of the resist significantly widens the valleys of the structure. Smaller line widths lead to a smaller etching depth, whereby the depth is reduced from 110 nm at 200 µm gap width of the mask to 30 nm at 1 µm for identical etching conditions.

Název v anglickém jazyce

Atmospheric pressure plasma jet pattern transfer using photolithographic masks

Popis výsledku anglicky

The transfer of photolithographically generated structures using ion beams/plasmas is a widely used technology with a wide range of applications. However, these techniques generally require expensive and high-maintenance vacuum systems, which is why a new atmospheric approach of pattern transfer is being pursued using atmospheric pressure plasma jet (APPJ) etching. In the present study, pattern transfer by plasma jet with a photopolymer masking into fused silica as a substrate is investigated. Etching was carried out with varying mask line widths and then subsequently analyzed using white light interferometry (WLI) and atomic force microscopy (AFM). It was shown that structures can be transferred into fused silica using a standard photoresist (AZ 4562). The faster etching of the resist significantly widens the valleys of the structure. Smaller line widths lead to a smaller etching depth, whereby the depth is reduced from 110 nm at 200 µm gap width of the mask to 30 nm at 1 µm for identical etching conditions.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Twelfth European Seminar on Precision Optics Manufacturing

ISBN

978-1-5106-9457-6

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

4

Strana od-do

1378904

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Teisnach

Datum konání akce

6. 5. 2025

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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