Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00647012" target="_blank" >RIV/68081731:_____/25:00647012 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy

Popis výsledku v původním jazyce

MOTLOVÁ, T., POKORNÁ, Z., MIKA, F., KNÁPEK, A. Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy. In: OTÁHAL, A., KNÁPEK, A., SKÁCEL, J., NOVOTNÁ, V., eds. IMAPS Flash Conference. 11th International Microelectronics Assembly and Packaging Society Flash Conference. Brno: Brno University of Technology, FEEC, 2025, č. 25, s. 47-48. ISBN 978-80-214-6369-1. Silicon Carbide (SiC) is a critical material in the microchip industry, valued for its excellent thermal, mechanical, and electrical properties. These attributes make SiC well-suited for high power electronics in diverse fields, including electric vehicles and space exploration. The performance and reliability of SiC devices are linked to the precise control and spatial distribution of dopants within the material. Characterizing these dopants is therefore important in semiconductor research and manufacturing. In our research, we are using Secondary Electron Microscopy (SEM), mainly thanks to its capacity to generate Secondary Electron Dopant Contrast, as an excellent non-destructive method for visualizing and profiling dopants in SiC devices.

Název v anglickém jazyce

Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy

Popis výsledku anglicky

MOTLOVÁ, T., POKORNÁ, Z., MIKA, F., KNÁPEK, A. Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy. In: OTÁHAL, A., KNÁPEK, A., SKÁCEL, J., NOVOTNÁ, V., eds. IMAPS Flash Conference. 11th International Microelectronics Assembly and Packaging Society Flash Conference. Brno: Brno University of Technology, FEEC, 2025, č. 25, s. 47-48. ISBN 978-80-214-6369-1. Silicon Carbide (SiC) is a critical material in the microchip industry, valued for its excellent thermal, mechanical, and electrical properties. These attributes make SiC well-suited for high power electronics in diverse fields, including electric vehicles and space exploration. The performance and reliability of SiC devices are linked to the precise control and spatial distribution of dopants within the material. Characterizing these dopants is therefore important in semiconductor research and manufacturing. In our research, we are using Secondary Electron Microscopy (SEM), mainly thanks to its capacity to generate Secondary Electron Dopant Contrast, as an excellent non-destructive method for visualizing and profiling dopants in SiC devices.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GF25-19981L" target="_blank" >GF25-19981L: INFASCOPE – Integrovaná analýza autoemisních zdrojů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů