Photoelectron spectroscopy study of PuCoGa5 thin films

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00331986" target="_blank" >RIV/68378271:_____/09:00331986 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
Photoelectron spectroscopy study of PuCoGa5 thin films
Popis výsledku v původním jazyce
Thin layers of PuCoGax (x = 4 to 18) have been prepared by dc sputtering from a PuCoGa5 single crystal target, and investigated in situ by X-ray and ultraviolet photoelectron spectroscopy. We could achieve broad composition variability (monitored by thePu-4f, Co-2p and Ga-2p core-level spectra). The results are compared to the valence band spectra reported previously for PuCoGa5. Our experiments reveal that some Ga excess was likely for those original data. We demonstrate that there is a tendency to the segregation of Ga at the surface, which has an important effect on the valence band spectra.
Název v anglickém jazyce
Photoelectron spectroscopy study of PuCoGa5 thin films
Popis výsledku anglicky
Thin layers of PuCoGax (x = 4 to 18) have been prepared by dc sputtering from a PuCoGa5 single crystal target, and investigated in situ by X-ray and ultraviolet photoelectron spectroscopy. We could achieve broad composition variability (monitored by thePu-4f, Co-2p and Ga-2p core-level spectra). The results are compared to the valence band spectra reported previously for PuCoGa5. Our experiments reveal that some Ga excess was likely for those original data. We demonstrate that there is a tendency to the segregation of Ga at the surface, which has an important effect on the valence band spectra.

Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Rok uplatnění
2009
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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