Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Kód výsledku v IS VaVaI

RIV/68378271:_____/11:00374550 - isvavai.cz

Výsledek na webu

http://dx.doi.org/10.1063/1.3622674

DOI - Digital Object Identifier

10.1063/1.3622674

Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Popis výsledku v původním jazyce

Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss functionis determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.

Název v anglickém jazyce

Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Popis výsledku anglicky

Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss functionis determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

GPP204/10/P028: Ztráty energie elektronů u povrchů pevných látek

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

110

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

"043507/1"-"043507/7"

Kód UT WoS článku

000294484300027

EID výsledku v databázi Scopus

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