Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00374550" target="_blank" >RIV/68378271:_____/11:00374550 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1063/1.3622674" target="_blank" >http://dx.doi.org/10.1063/1.3622674</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3622674" target="_blank" >10.1063/1.3622674</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
Popis výsledku v původním jazyce
Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss functionis determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.
Název v anglickém jazyce
Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
Popis výsledku anglicky
Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss functionis determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/GPP204%2F10%2FP028" target="_blank" >GPP204/10/P028: Ztráty energie elektronů u povrchů pevných látek</a><br>
Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Svazek periodika
110
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
"043507/1"-"043507/7"
Kód UT WoS článku
000294484300027
EID výsledku v databázi Scopus
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