Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377299" target="_blank" >RIV/68378271:_____/12:00377299 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/12:00377299

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES

Popis výsledku v původním jazyce

Structures with self assembled quantum dots were prepared by low pressure MOVPE using Stranski-Krastanow growth mode. One single layer of InAs QDs confined between thin GaAs layers was embedded in ternary AlGaAs material. GaAs buffer and capping layers were also used. QDs were detected by ballistic electron emission microscopy BEEM. Ballistic current IB through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy BEES characteristics IB-V were measured on individual QDs. Derivation dIB/dV corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electronp1-like state, one- and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined.

Název v anglickém jazyce

Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES

Popis výsledku anglicky

Structures with self assembled quantum dots were prepared by low pressure MOVPE using Stranski-Krastanow growth mode. One single layer of InAs QDs confined between thin GaAs layers was embedded in ternary AlGaAs material. GaAs buffer and capping layers were also used. QDs were detected by ballistic electron emission microscopy BEEM. Ballistic current IB through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy BEES characteristics IB-V were measured on individual QDs. Derivation dIB/dV corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electronp1-like state, one- and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

17th Conference of Czech and Slovak Physicists Proceedings

ISBN

978-80-970625-4-5

ISSN

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e-ISSN

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Počet stran výsledku

3

Strana od-do

105-107

Název nakladatele

Slovak Physical Society

Místo vydání

Košice

Místo konání akce

Žilina

Datum konání akce

5. 9. 2011

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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