Variable light biasing method to measure component I-V characteristics of multi-junction solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377804" target="_blank" >RIV/68378271:_____/12:00377804 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.solmat.2012.04.014" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2012.04.014</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solmat.2012.04.014" target="_blank" >10.1016/j.solmat.2012.04.014</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Variable light biasing method to measure component I-V characteristics of multi-junction solar cells

Popis výsledku v původním jazyce

We present a new technique to measure component current-voltage (I-V) curves of individual sub-cells integrated in a monolithic multi-junction solar cell. This new approach, compared to all previously reported ones, is well suited for thin-film silicon p-i-n structures where the so-called shifting approximation, which supposes that illumination only shifts the I-V curve without changing its shape, is not valid. Moreover, the proposed method is particularly resistant to problems related to electrical shunts. The principle of this method lies in coupling the level of a selective light bias with the level of measured electrical current in order to fix the voltage of a selected sub-cell while sweeping over the current axis. When one of the sub-cells has afixed voltage, it is then possible to get the I-V characteristics of the second one, shifted by a fixed voltage value. This measurement procedure is simple and requires no modeling.

Název v anglickém jazyce

Variable light biasing method to measure component I-V characteristics of multi-junction solar cells

Popis výsledku anglicky

We present a new technique to measure component current-voltage (I-V) curves of individual sub-cells integrated in a monolithic multi-junction solar cell. This new approach, compared to all previously reported ones, is well suited for thin-film silicon p-i-n structures where the so-called shifting approximation, which supposes that illumination only shifts the I-V curve without changing its shape, is not valid. Moreover, the proposed method is particularly resistant to problems related to electrical shunts. The principle of this method lies in coupling the level of a selective light bias with the level of measured electrical current in order to fix the voltage of a selected sub-cell while sweeping over the current axis. When one of the sub-cells has afixed voltage, it is then possible to get the I-V characteristics of the second one, shifted by a fixed voltage value. This measurement procedure is simple and requires no modeling.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA202%2F09%2F0417" target="_blank" >GA202/09/0417: Nová nedestruktivní technika měření V-A křivek složených solárních článků</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solar Energy Materials and Solar Cells

ISSN

0927-0248

e-ISSN

—

Svazek periodika

103

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

128-133

Kód UT WoS článku

000306044300020

EID výsledku v databázi Scopus

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