Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00386606" target="_blank" >RIV/68378271:_____/12:00386606 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11110/12:12615

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.snb.2012.02.049" target="_blank" >http://dx.doi.org/10.1016/j.snb.2012.02.049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.snb.2012.02.049" target="_blank" >10.1016/j.snb.2012.02.049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Popis výsledku v původním jazyce

We employ nanocrystalline diamond (NCD) thin films with average grain sizes of 250 and 80 nm to resolve influence of grain boundaries and sp2 phase on protein adsorption and electronic function of solutiongated field-effect transistors (SGFET). Microscopic (20 u m 60 um) SGFETs are fabricated without gate oxides based on hydrogen-terminated NCD films on glass substrates. We show that NCD with grain sizes down to 80 nm and film thickness of 100 nm is fully operational as SGFET. We find that inherent hysteresis of SGFET transfer characteristics, their reaction time, their negative shift after protein adsorption and cell culturing process, low gate leakage currents and no influence of UV sterilization or rinsing are all independent of the NCD grain size.Thus we propose a microscopic model where the function of NCD SGFET is determined by the H-terminated surface of diamond nanocrystals and its interaction with proteins, not by grain boundaries or sp2 phase in general.

Název v anglickém jazyce

Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Popis výsledku anglicky

We employ nanocrystalline diamond (NCD) thin films with average grain sizes of 250 and 80 nm to resolve influence of grain boundaries and sp2 phase on protein adsorption and electronic function of solutiongated field-effect transistors (SGFET). Microscopic (20 u m 60 um) SGFETs are fabricated without gate oxides based on hydrogen-terminated NCD films on glass substrates. We show that NCD with grain sizes down to 80 nm and film thickness of 100 nm is fully operational as SGFET. We find that inherent hysteresis of SGFET transfer characteristics, their reaction time, their negative shift after protein adsorption and cell culturing process, low gate leakage currents and no influence of UV sterilization or rinsing are all independent of the NCD grain size.Thus we propose a microscopic model where the function of NCD SGFET is determined by the H-terminated surface of diamond nanocrystals and its interaction with proteins, not by grain boundaries or sp2 phase in general.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Sensors and Actuators B - Chemical

ISSN

0925-4005

e-ISSN

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Svazek periodika

166-167

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

239-245

Kód UT WoS článku

000305356900035

EID výsledku v databázi Scopus

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