Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389312" target="_blank" >RIV/68378271:_____/12:00389312 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TNS.2012.2197024" target="_blank" >http://dx.doi.org/10.1109/TNS.2012.2197024</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2012.2197024" target="_blank" >10.1109/TNS.2012.2197024</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

Popis výsledku v původním jazyce

Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties inCe:GAGG were studied. 5d-4f emission within 520?530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

Název v anglickém jazyce

Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

Popis výsledku anglicky

Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties inCe:GAGG were studied. 5d-4f emission within 520?530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA202%2F08%2F0893" target="_blank" >GA202/08/0893: Nové materiály a technologie pro přípravu tenkovrstvých scintilátorů</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

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Svazek periodika

59

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

2112-2115

Kód UT WoS článku

000310143300015

EID výsledku v databázi Scopus

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