Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00399146" target="_blank" >RIV/68378271:_____/13:00399146 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4829027" target="_blank" >http://dx.doi.org/10.1063/1.4829027</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4829027" target="_blank" >10.1063/1.4829027</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Popis výsledku v původním jazyce

Two types of QDs, InAs and GaAsSb, are combined in self assembled vertically correlated QD structures. The first QD layer is formed by InAs QDs and the second by vertically correlated GaAsSb QDs. Combined QD layers are separated by a triangular GaAsSb barrier. The structure can be prepared as type-I, with both electrons and holes confined in InAs QDs, exhibiting a strong photoluminescence, or type-II, with electrons confined in InAs QDs and holes in GaAsSb QDs. The presence of the thin triangular GaAsSbbarrier enables the realization of different quantum level alignment between correlated InAs and GaAsSb QDs, which can be adjusted by structure parameters as type-I or type-II like for ground and excited states separately. The position of holes in thistype of structure is influenced by the presence of the triangular barrier or by the size and composition of the GaAsSb QDs. The electron-hole wavefunction overlap and the PL intensity alike can also be controlled by structure engineering.

Název v anglickém jazyce

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Popis výsledku anglicky

Two types of QDs, InAs and GaAsSb, are combined in self assembled vertically correlated QD structures. The first QD layer is formed by InAs QDs and the second by vertically correlated GaAsSb QDs. Combined QD layers are separated by a triangular GaAsSb barrier. The structure can be prepared as type-I, with both electrons and holes confined in InAs QDs, exhibiting a strong photoluminescence, or type-II, with electrons confined in InAs QDs and holes in GaAsSb QDs. The presence of the thin triangular GaAsSbbarrier enables the realization of different quantum level alignment between correlated InAs and GaAsSb QDs, which can be adjusted by structure parameters as type-I or type-II like for ground and excited states separately. The position of holes in thistype of structure is influenced by the presence of the triangular barrier or by the size and composition of the GaAsSb QDs. The electron-hole wavefunction overlap and the PL intensity alike can also be controlled by structure engineering.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

114

Číslo periodika v rámci svazku

17

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

"174305-1"-"174305-5"

Kód UT WoS článku

000327591900057

EID výsledku v databázi Scopus

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