GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474050" target="_blank" >RIV/68378271:_____/17:00474050 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.080" target="_blank" >10.1016/j.jcrysgro.2016.11.080</a>

Jazyk výsledku

angličtina

Název v původním jazyce

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Popis výsledku v původním jazyce

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures. Covering QDs by a GaAsSb strain reducing layer (SRL) with type II band alignment significantly improves photogenerated carrier extraction from InAs QDs. An additional thin InGaAs SRL below InAs QDs further enhances the extraction of photogenerated carriers. Properties of QD structures without any SRL, with GaAsSb covering SRL, and with combination of thin below-QDs InGaAs and GaAsSb covering SRLs are compared and the mechanism of carrier extraction is discussed. We showed that thin below-QDs InGaAs SRL together with increasing profile of antimony concentration in covering GaAsSb SRL can significantly improve the resulting properties of solar cell structures with InAs QDs.

Název v anglickém jazyce

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Popis výsledku anglicky

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures. Covering QDs by a GaAsSb strain reducing layer (SRL) with type II band alignment significantly improves photogenerated carrier extraction from InAs QDs. An additional thin InGaAs SRL below InAs QDs further enhances the extraction of photogenerated carriers. Properties of QD structures without any SRL, with GaAsSb covering SRL, and with combination of thin below-QDs InGaAs and GaAsSb covering SRLs are compared and the mechanism of carrier extraction is discussed. We showed that thin below-QDs InGaAs SRL together with increasing profile of antimony concentration in covering GaAsSb SRL can significantly improve the resulting properties of solar cell structures with InAs QDs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

464

Číslo periodika v rámci svazku

Apr

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

64-68

Kód UT WoS článku

000398873500012

EID výsledku v databázi Scopus

2-s2.0-85015369236