Sensing of phosgene by a porous-like nanocrystalline diamond layer with buried metallic electrodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00421360" target="_blank" >RIV/68378271:_____/13:00421360 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/46747885:24510/13:#0000949

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.snb.2013.07.079" target="_blank" >http://dx.doi.org/10.1016/j.snb.2013.07.079</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.snb.2013.07.079" target="_blank" >10.1016/j.snb.2013.07.079</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Sensing of phosgene by a porous-like nanocrystalline diamond layer with buried metallic electrodes

Popis výsledku v původním jazyce

Nanocrystalline diamond with a porous-like morphology was used as the functional part of a semiconductor gas sensor. The device function is based on the two-dimensional p-type surface conductivity of intrinsic diamond with a H-terminated surface. Metallic electrodes are buried beneath the diamond film. The gas sensing properties of the sensor structure were examined using oxidising gases (i.e., phosgene, humid air) at various operating temperatures. A pronounced and selective increase by two orders of magnitude was found in the surface conductivity after sensor exposure to phosgene gas (20 ppm) at 140°C. Density functional theory calculations indicated no direct charge transfer between the phosgene molecule and diamond. We present a model in which phosgene indirectly yet efficiently increases the H3O+ concentration, which consequently leads to multiplied electron transfer and a pronounced sensor response.

Název v anglickém jazyce

Sensing of phosgene by a porous-like nanocrystalline diamond layer with buried metallic electrodes

Popis výsledku anglicky

Nanocrystalline diamond with a porous-like morphology was used as the functional part of a semiconductor gas sensor. The device function is based on the two-dimensional p-type surface conductivity of intrinsic diamond with a H-terminated surface. Metallic electrodes are buried beneath the diamond film. The gas sensing properties of the sensor structure were examined using oxidising gases (i.e., phosgene, humid air) at various operating temperatures. A pronounced and selective increase by two orders of magnitude was found in the surface conductivity after sensor exposure to phosgene gas (20 ppm) at 140°C. Density functional theory calculations indicated no direct charge transfer between the phosgene molecule and diamond. We present a model in which phosgene indirectly yet efficiently increases the H3O+ concentration, which consequently leads to multiplied electron transfer and a pronounced sensor response.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Sensors and Actuators B - Chemical

ISSN

0925-4005

e-ISSN

—

Svazek periodika

188

Číslo periodika v rámci svazku

NOV

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

675-680

Kód UT WoS článku

000326345600091

EID výsledku v databázi Scopus

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