Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00436022" target="_blank" >RIV/68378271:_____/14:00436022 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22340/14:43897868

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s00339-014-8474-4" target="_blank" >http://dx.doi.org/10.1007/s00339-014-8474-4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-014-8474-4" target="_blank" >10.1007/s00339-014-8474-4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

Popis výsledku v původním jazyce

ZnPc thin films were prepared by pulsed laser deposition (KrF laser, ? = 248 nm, ? = 5 ns, f = 50 Hz) on suprasil substrates in vacuum. Optical properties in UV?Vis spectral region were analyzed as functions of laser fluence from 40 to 100 mJ/cm2 by spectrophotometric and spectral ellipsometry measurements. The spectral ellipsometry data were treated using a three-layer model (substrate, film, roughness). The best results of data fitting were obtained when Q band was characterized by two Lorentz oscillators, while two Gaussian oscillators were used for B and C band fitting. We derived the band gap using Tauc plot considering ZnPc a direct band gap semiconductor. The band gap values were found decreasing from 3.13 to 3.09 eV with increasing laser fluence, which might be related with formation of trapping sites at higher fluence

Název v anglickém jazyce

Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

Popis výsledku anglicky

ZnPc thin films were prepared by pulsed laser deposition (KrF laser, ? = 248 nm, ? = 5 ns, f = 50 Hz) on suprasil substrates in vacuum. Optical properties in UV?Vis spectral region were analyzed as functions of laser fluence from 40 to 100 mJ/cm2 by spectrophotometric and spectral ellipsometry measurements. The spectral ellipsometry data were treated using a three-layer model (substrate, film, roughness). The best results of data fitting were obtained when Q band was characterized by two Lorentz oscillators, while two Gaussian oscillators were used for B and C band fitting. We derived the band gap using Tauc plot considering ZnPc a direct band gap semiconductor. The band gap values were found decreasing from 3.13 to 3.09 eV with increasing laser fluence, which might be related with formation of trapping sites at higher fluence

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F1298" target="_blank" >GAP108/11/1298: Detekční vrstvy na bázi kompozitů organokomplexů s nanočásticemi pro chemické senzory</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A - Materials Science & Processing

ISSN

0947-8396

e-ISSN

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Svazek periodika

117

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

377-381

Kód UT WoS článku

000342281800060

EID výsledku v databázi Scopus

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