Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00443462" target="_blank" >RIV/68378271:_____/15:00443462 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61388955:_____/15:00443462 RIV/68407700:21460/15:00241932

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.diamond.2015.03.002" target="_blank" >http://dx.doi.org/10.1016/j.diamond.2015.03.002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2015.03.002" target="_blank" >10.1016/j.diamond.2015.03.002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

Popis výsledku v původním jazyce

This work is a systematic study of electrochemical impedance spectroscopy of high quality polycrystalline boron doped diamond films with varying boron content (from semiconducting to metallic behavior) and with different surface terminations (hydrogen oroxygen) in aqueous electrolyte solution. The films were grown by microwave plasma enhanced chemical vapor deposition. The concentration of acceptors (NA) was determined from the Mott-Schottky plots and the values were compared with those from neutron depth profiling and Raman spectroscopy. The NA values are in a good agreement across the different techniques, ranging from ca. 1.2 1020 cm 3 for semiconducting samples up to ca. 2 1021 cm 3 for heavily doped films with metallic conductivity. The films with hydrogen terminated surface exhibit lower values of both the flat band potentials (Efb) and the NA values, compared to the films with oxygen terminated surface.

Název v anglickém jazyce

Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

Popis výsledku anglicky

This work is a systematic study of electrochemical impedance spectroscopy of high quality polycrystalline boron doped diamond films with varying boron content (from semiconducting to metallic behavior) and with different surface terminations (hydrogen oroxygen) in aqueous electrolyte solution. The films were grown by microwave plasma enhanced chemical vapor deposition. The concentration of acceptors (NA) was determined from the Mott-Schottky plots and the values were compared with those from neutron depth profiling and Raman spectroscopy. The NA values are in a good agreement across the different techniques, ranging from ca. 1.2 1020 cm 3 for semiconducting samples up to ca. 2 1021 cm 3 for heavily doped films with metallic conductivity. The films with hydrogen terminated surface exhibit lower values of both the flat band potentials (Efb) and the NA values, compared to the films with oxygen terminated surface.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CG - Elektrochemie

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

—

Svazek periodika

55

Číslo periodika v rámci svazku

MAY 2015

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

70-76

Kód UT WoS článku

000354585700010

EID výsledku v databázi Scopus

2-s2.0-84924939600