Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F12%3A00198131" target="_blank" >RIV/68407700:21460/12:00198131 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/13:00384574 RIV/61388955:_____/13:00384574 RIV/61389005:_____/13:00384574

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0013468612014934" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0013468612014934</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.electacta.2012.09.031" target="_blank" >10.1016/j.electacta.2012.09.031</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

Popis výsledku v původním jazyce

In this work we report on electrochemical and in situ Raman spectroelectrochemical characterization of low quality (LQ) ultrathin nanocrystalline and high quality (HQ) polycrystalline boron doped diamond (BDD) compared especially in terms of the sp2 carbon content. The BDD films were grown by microwave plasma enhanced chemical vapor deposition and doped with various boron concentrations from 250 to 8000 ppm (boron/carbon ratio in the gas phase) at different conditions. The quality (presence of graphiticor amorphous phases) and boron doping levels in the BDD films were analyzed by micro-Raman spectroscopy. From the neutron depth profiling, it was found that the boron content in the near surface region (<1 ?m) was in the range from about 4 x 1019 cm-3 to 58 x 1020 cm-3 for B/C from 250 ppm to 8000 ppm, respectively. The electrochemical measurements have been performed in aqueous 0.5 M H2SO4 in the potential range from -2 to 2.5 V vs. Hg/Hg2SO4. Cyclic voltammetry showed that the electro

Název v anglickém jazyce

Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

Popis výsledku anglicky

In this work we report on electrochemical and in situ Raman spectroelectrochemical characterization of low quality (LQ) ultrathin nanocrystalline and high quality (HQ) polycrystalline boron doped diamond (BDD) compared especially in terms of the sp2 carbon content. The BDD films were grown by microwave plasma enhanced chemical vapor deposition and doped with various boron concentrations from 250 to 8000 ppm (boron/carbon ratio in the gas phase) at different conditions. The quality (presence of graphiticor amorphous phases) and boron doping levels in the BDD films were analyzed by micro-Raman spectroscopy. From the neutron depth profiling, it was found that the boron content in the near surface region (<1 ?m) was in the range from about 4 x 1019 cm-3 to 58 x 1020 cm-3 for B/C from 250 ppm to 8000 ppm, respectively. The electrochemical measurements have been performed in aqueous 0.5 M H2SO4 in the potential range from -2 to 2.5 V vs. Hg/Hg2SO4. Cyclic voltammetry showed that the electro

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Electrochimita Acta

ISSN

0013-4686

e-ISSN

—

Svazek periodika

87

Číslo periodika v rámci svazku

87

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

518-525

Kód UT WoS článku

000315171100067

EID výsledku v databázi Scopus

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